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SST13LP05-MLCF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
4
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP05
Data Sheet
Pin Assignments
Figure 2: Pin Assignments for 16-contact LGA
Pin Descriptions
Table 1: Pin Description
Symbol Pin No. Pin Name Type Function
GND 0 Ground Ground Pad
NC 1 No Connection Unconnected Pin
RF
IN
_LB 2 I 50 Matched RF Input for Low Band, AC coupled
RF
IN
_HB 3 I 50 Matched RF Input for High Band, AC coupled
NC 4 No Connection Unconnected Pin
V
REG
_HB 5 Power Supply PWR Analog current control for High Band
NC 6 No Connection Unconnected Pin
V
CC
_HB 7 Power Supply PWR V
CC
Power Supply for High Band
D
ET
_HB 8 O Detector Voltage Output for High Band
NC 9 No Connection Unconnected Pin
RF
OUT
_HB 10 Power Supply O/PWR 50 Matched RF output for High Band
RF
OUT
_LB 11 Power Supply O/PWR 50 Matched RF output for Low Band
NC 12 No Connection Unconnected Pin
D
ET
_LB 13 O Detector Voltage Output for Low Band
V
CC
_LB 14 Power Supply PWR V
CC
Power Supply for Low Band
NC 15 No Connection Unconnected Pin
V
REG
_LB 16 Power Supply PWR Analog current control for Low Band
T1.0 75032
V
REG
_LB
V
CC
_LB
NC
Det_LB
V
REG
_HB
NC
V
CC
_HB
Det_HB
NC
RF
OUT
_LB
RF
OUT
_HB
NC
NC
RF
IN
_LB
RF
IN
_HB
NC
1318 P1.1
56 8
16 15 14
9
11
12
10
13
2
1
4
3
7
Top View
(contacts facing down)
RF and DC GND
0
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
5
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP05
Data Sheet
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC volt-
age and current specifications. Refer to Figures 3 through 22 for the RF performance.
For 802.11b/g Operation
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these conditions or conditions greater than those defined in the operational sections
of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reli-
ability.
Supply Voltage (V
CC
)...................................................-0.3V to +3.6V
Reference Voltage (V
REF
)...............................................-0.3V to +3.3V
DC supply current (I
CC
)......................................................400mA
Operating Temperature (T
A
)............................................ -40ºC to +85ºC
Storage Temperature (T
STG
)........................................... -40ºC to +120ºC
Maximum Junction Temperature (T
J
) ........................................... +150ºC
Table 2: DC Electrical Characteristics
Symbol Parameter Min. Typ Max. Unit
V
CC
Supply Voltage 3.0 3.3 3.6 V
I
CC
Supply Current
for 802.11g, 19 dBm 160 mA
for 802.11b, 23.5 dBm 235 mA
I
REG
Analog control current at On state 2 mA
V
REG
Reference Voltage 2.95 V
T2.0 75032
Table 3: AC Electrical Characteristics for Configuration
Symbol Parameter Min. Typ Max. Unit
F
L-U
Frequency range 2.4 2.5 GHz
G Small signal gain 28 29 dB
G
VAR1
Gain variation over temperature 0°C–85°C-1 1dB
G
VAR2
Gain flatness over any 50 MHz bandwidth -0.3 0.3 dB
ACPR Meet 11b spectrum mask 22 23 dBm
Meet 11g OFDM 54 Mbps spectrum mask 22 23 dBm
Added EVM P
OUT
= 19 dBm with 54Mbps -28 dB
11g OFDM signal when operating at 3.3V Vcc 4 %
2f, 3f, 4f, 5f Harmonics at P
OUT
= 20 dBm -50 dBc
Spurious non-harmonics at P
OUT
= 20 dBm -60 dBc
In/Out return loss at 50 nominal impedance 6 dB
T3.0 75032
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
6
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP05
Data Sheet
For 802.11a Operation
Table 4: DC Electrical Characteristics
Symbol Parameter Min. Typ Max. Unit
V
CC
Supply Voltage 3 3.3 3.6 V
I
CC
Supply Current
for 802.11a, 18 dBm 270 mA
I
REG
Analog control current at On state 2 A
V
REG
Reference Voltage 2.95 V
T4.1 75032
Table 5: AC Electrical Characteristics for Configuration
Symbol Parameter Min. Typ Max. Unit
F
L-U
Frequency range 4.92 5.805 GHz
G Small signal gain across 4.9- 5.8 GHz 26 dB
G
VAR1
Gain variation over temperature 0°C–85°C-1 1dB
G
VAR2
Gain flatness over any 100 MHz bandwidth -0.5 0.5 dB
ACPR Meet 11a OFDM 54 Mbps spectrum mask 22 22.5 dBm
Added EVM P
OUT
= 18 dBm with 54Mbps -28 dB
11aOFDM signal when operating at 3.3V Vcc 4 %
2f, 3f, 4f, 5f Harmonics at 20 dBm -45 dBc
T5.1 75032
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

SST13LP05-MLCF

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Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5/4.9-5.8GHz 3.3V 802.11 a/b/g
Lifecycle:
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