IXFA102N15T Datasheet IXFP102N15T, IXFA102N15T, IXFH102N15T | P1-P3

N-Channel Enhancement Mode

Avalanche Rated

V

DSS

= 150V

I

D25

= 102A

R

DS(on)

≤≤

≤

18m

ΩΩ

Ω

t

rr

≤≤

≤ 120ns

DS100045A(04/09)

IXFA102N15T

IXFH102N15T

IXFP102N15T

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 150 V

V

DGR

T

J

= 25°C to 175°C R

GS

= 1MΩ 150 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 102 A

I

LRMS

Lead Current Limit, RMS 75 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

300 A

I

A

T

C

= 25°C51A

E

AS

T

C

= 25°C 750 mJ

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 175°C 20 V/ns

P

D

T

C

= 25°C 455 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 150 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 2.5 5.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 5 μA

T

J

= 150°C 750 μA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 18 mΩ

Trench Gate Power

MOSFET HiperFET

TM

Features

z

International Standard Packages

z

Avalanche Rated

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switched-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Uninterruptible Power Supplies

z

High Speed Power Switching

Applications

(TAB)

TO-263 (IXFA)

G

S

(TAB)

TO-220 (IXFP)

D

G

S

G = Gate D = Drain

S = Source TAB = Drain

TO-247 (IXFH)

(TAB)

G

D

S

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA102N15T IXFH102N15T

IXFP102N15T

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 50 80 S

C

iss

5220 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 685 pF

C

rss

95 pF

t

d(on)

20 ns

t

r

14 ns

t

d(off)

25 ns

t

f

22 ns

Q

g(on)

87 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 25A 23 nC

Q

gd

31 nC

R

thJC

0.33 °C/W

R

thCH

(TO-220) 0.50 °C/W

(TO-247) 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 102 A

I

SM

Repetitive, Pulse Width Limited by T

JM

400 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.3 V

t

rr

120 ns

I

RM

6.2 A

Q

RM

236 nC

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 3.3Ω (External)

I

F

= 51A, -di/dt = 100A/μs

V

R

= 75V, V

GS

= 0V

Pins: 1 - Gate 2 - Drain

TO-220 (IXFP) Outline

∅ P

TO-247 (IXFH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-263 (IXFA) Outline

IXFA102N15T IXFH102N15T

IXFP102N15T

Fig. 1. Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

0 2 4 6 8 10 12 14 16

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

6V

7V

Fig. 3. Output Characteristics

@ 150ºC

0

10

20

30

40

50

60

70

80

90

100

110

0.00.40.81.21.62.02.42.83.23.64.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 51A Value

vs. Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 102A

I

D

= 51A

Fig. 5. R

DS(on)

Normalized to I

D

= 51A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 40 80 120 160 200 240 280

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFA102N15T

IXFA102N15T

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