OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXFA102N15T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
275
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 51A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
1000.0
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
R
DS(on)
Limit
25µs
100µs
1ms
10ms
100ms
DC
IXYS REF: F_102N15T(6E)9-30-08
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
12
13
14
15
16
17
18
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
12
14
16
18
20
22
24
26
28
30
32
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 102A
I
D
= 51A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
21
22
23
24
25
26
27
28
29
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
22
24
26
28
30
32
34
36
38
40
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
I
D
= 51A
I
D
= 102A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
21
22
23
24
25
26
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
f
- Nanoseconds
18
22
26
30
34
38
42
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
11
12
13
14
15
16
17
18
19
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
I
D
= 102A
I
D
= 51A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
40
80
120
160
200
240
280
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 51A
I
D
= 102A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA102N15T IXFH102N15T
IXFP102N15T
IXYS REF: F_102N15T(6E)9-30-08
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXFA102N15T

Mfr. #:
Buy IXFA102N15T
Manufacturer:
Littelfuse
Description:
MOSFET 102 Amps 150V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet