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ESDAVLC8-1BT2Y

P1-P3P4-P6P7-P9P10-P12P13-P13
This is information on a product in full production.
July 2014 DocID025558 Rev 2 1/13
ESDAVLC8-1BT2Y
Automotive single-line low capacitance Transil™,
transient surge voltage suppressor (TVS) for ESD protection
Datasheet − production data
Features
• Single-line bidirectional protection
• Breakdown voltage = 8.5 V min.
• Very low capacitance = 4.5 pF at 0 V
• Lead-free packages
• ECOPACK
®
2 compliant component
• AEC-Q101 qualified
Benefits
• Very low capacitance for optimized data
integrity
• Very low reverse current
< 50 nA
• Low PCB space consumption: 0.6 mm
2
• High reliability offered by monolithic integration
Complies with the following standards:
• IEC 61000-4-2 (exceeds level 4)
– 17 kV (air discharge)
– 17 kV (contact discharge)
• ISO10605: C = 330 pF, R = 330
Ω
– 15 kV (air discharge)
– 8 kV (contact discharge)
• MIL STD 883G - Method 3015-7: class 3
– HBM (human body model)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
• Automotive applications
• Computers
• Printers
• Communication systems
• Cellular phone handsets and accessories
• Video equipment
Description
The ESDAVLC8-1BT2Y is a bidirectional single-
line TVS diode designed to protect data lines or
other I/O ports against ESD transients.
This device is ideal for applications where both
printed circuit board space and power absorption
capability are required.
Figure 1. Functional diagram
TM: Transil is a trademark of STMicroelectronics
SOD882T
ESDAVLC8-1BT2Y
I/O1
I/O2
www.st.com
Characteristics ESDAVLC8-1BT2Y
2/13 DocID025558 Rev 2
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
(1)
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
ISO10605 contact discharge
ISO10605 air discharge
MIL STD 883G - Method 3015-7: class 3
17
17
8
15
25
kV
P
PP
(1)
Peak pulse power dissipation (8/20 µs) T
j
initial = T
amb
30 W
I
PP
Peak pulse current (8/20 µs) 1.3 A
T
OP
Operating junction temperature range - 50 to + 125 °C
T
stg
Storage temperature range - 65 to + 125 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test condition Min. Typ. Max. Unit
V
BR
From I/O 1 to I/O 2, I
R
= 1 mA 14.5 17 20
V
From I/O 2 to I/O 1, I
R
= 1 mA 8.5 11 14
I
RM
V
RM
= 3 V 50 nA
C
line
F = 1 MHz, V
R
= 0 V 4.5 5.5 pF
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
I = Peak pulse current
I = Breakdown current
BR
RM RM
RM
PP
R
V = Clamping voltage
V Triggering voltage=
C = Input capacitance per line
R Dynamic resistance=
CL
TRIG
line
D
V
CL
V
BR
V
RM
I
R
I
PP
V
I
V
Trig
I
RM
R
D
DocID025558 Rev 2 3/13
ESDAVLC8-1BT2Y Characteristics
13
Figure 3. Peak pulse power versus initial
junction temperature (maximum values)
Figure 4. Junction capacitance versus reverse
voltage applied (typical values)
P
PP
(W)
0
10
20
30
40
50
0
25
50 75
100
125
150
8/20µs
T (°C)
j
0,0
1,0
2,0
3,0
4,0
5,0
6,0
0123
C(pF)
F = 1 MHz
V = 30 mV
OSC
T = 25 °C
j
V(V)
LINE
Figure 5. Peak pulse power versus exponential
pulse duration (maximum values)
Figure 6. Peak pulse power versus exponential
pulse duration (maximum values)
P
PP
(W)
1
10
100
1000
1 10 100 1000
T
j initial
= 25
°C
t (µs)
P
I/O 1 to I/O 2
P
PP
(W)
1
10
100
1000
1 10 100 1000
t(µs)
P
T
j initial
= 25
°C
I/O 2 to I/O 1
Figure 7. Clamping voltage versus peak pulse
current (maximum values)
Figure 8. Clamping voltage versus peak pulse
current (maximum values)
0,1
1
10
19 20 21 22 23 24
V(V)
CL
I(A)
PP
8/20 µs
T
j
initial
= 25
°C
I/O 1 to I/O 2
P1-P3P4-P6P7-P9P10-P12P13-P13

ESDAVLC8-1BT2Y

Mfr. #:
Buy ESDAVLC8-1BT2Y
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors Auto SGL-line low cap Transil TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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