AL8400/ AL8400Q
Document number: DS35115 Rev. 4 - 2
10 of 13
www.diodes.com
August 2012
© Diodes Incorporated
AL8400 /
L8400Q
Application Information (cont.)
MOSFET Example Choosing R
B
and C
L
(cont.)
R
Bmax
The minimum recommended I
OUT
for AL8400 is 0.3mA.
The maximum V
GS
is not stated explicitly, but from the datasheet graphs (Figures 8 and 9) it is expected to be approximately 3.8V at -50°C.
=
−−
=
minOUT
FBmaxGSminCC
maxB
I
VVV
R
=
−−
=
mA3.0
V2.0V8.3V4.11
24.7k
To ensure that the output capability of the AL8400 is not exceeded at maximum V
IN
and minimum V
GS
these values should be substituted back
into the R
B
equation to determine the minimum allowable value for R
B
.
R
Bmin
The maximum recommended I
OUT
for the AL8400 is 15mA. The minimum V
GS
is about 1V and assuming V
CCmax
= 8.4V:
maxOUT
FBminGSmaxCC
minB
I
VVV
R
−−
=
=
=
mA15
V2.0V1V6.12 −−
= 480
this is less than 12k and so the AL8400 output current is within its ratings.
Figure 8 Typical Transfer Characteristics
Figure 9 Normalised Curves and Temperature
Assuming V
GS
~ 3V and choosing an R
B
= 8.2k satisfies the requirements for the AL8400 conformance and sets approximately 1mA in the OUT
pin. The required compensation capacitor can therefore be calculated from:
F243.0
k2.8
ms2
C
L
μ≈
Ω
≈
Æ 220nF
The value of R
SET
is V
REF
/I
LED
R
SET
= 0.2/0.2 = 1
Finally, the maximum power dissipation of the external MOSFET is:
P
TOT
= I
LED
x V
DSMAX
=
I
LED
x (V
CCmax
– V
LEDMIN
– V
FB
)
= 0.2 x( 12.6 – 9 -0.2) = 0.68W
This determines the package choice (θ
JA
) in order to keep the junction temperature below the maximum value allowed.
T
J
= T
A
+ P
TOT
x θ
JA
= 60 + 0.68 x 62.5 = +102.5˚C