AL8400/ AL8400Q
Document number: DS35115 Rev. 4 - 2
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© Diodes Incorporated
AL8400 /
A
L8400Q
Application Information (cont.)
Bipolar Example – Choosing R
B
and C
L
The driver is required to control 3 series connected LEDs at 150mA ±10% from a 12V ±5% supply. Each LED has a forward voltage of 3V
minimum and of 3.6V maximum.
From this information the minimum supply voltage is 11.4V and the maximum LED chain voltage is 10.8V. Rearranging equation 1 (page 7); the
minimum voltage drop across the bipolar transistor is determined to be:
V4.0V2.0V8.10V4.11VVVV
FBmaxLEDminCCCE
===
We will use the DNLS320E bipolar transistor (Q2.)
R
Bmax
The DNLS320E datasheet table states:
V
CE(SAT)max =
0.1V at I
C
= 100mA, I
B
= 0.5mA
h
FEmin
= 500 @ I
C
= 100mA, V
CE
= 2V;
The datasheet graph (see left) shows a very slow variation at 100mA, so a value of 500 is considered appropriate.
Then
500
mA150
I
maxB
=
= 0.3mA
The minimum recommended I
OUT
for AL8400 is 0.3mA and the maximum V
BE
, according to the DNLS320E datasheet graph (Figure 6), is
approximately 0.8V at -55°C.
From these and equation 3, the maximum allowed bias resistor value is:
=
+
=
maxBminOUT
FBmaxBEminCC
maxB
II
VVV
R
0003.00003.0
2.08.04.11
+
=
= 17.3k
Figure 5 DNLS320E H
FE
vs. I
C
Figure 6 DNLS320E V
BE
vs. I
C
AL8400/ AL8400Q
Document number: DS35115 Rev. 4 - 2
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August 2012
© Diodes Incorporated
AL8400 /
A
L8400Q
Application Information (cont.)
Bipolar Example – Choosing R
B
and C
L
(cont.)
R
Bmin
To ensure that the output capability of the AL8400 is not exceeded at maximum V
IN
, maximum h
FE
and minimum V
BE
, these values should be
substituted back into the R
B
equation to determine the minimum allowable value for R
B
.
h
FEmax
is about 1200 @ I
C
= 100mA, and a temperature of +85°C (Figure 5) which results in:
1200
150
I
minB
=
= 0.125mA
The maximum recommended I
OUT
for AL8400 is 15mA.The minimum V
BE
, according to the DNLS320E datasheet graph (Figure 6), is
approximately 0.4V at 85°C and assuming V
CCmax
= 12.6V, then from equation 4 the bias resistor value is:
minBmaxOUT
FBminBEmaxCC
minB
II
VVV
R
+
=
=
000125.0015.0
2.04.04.8
+
=
= 516 this is less than 17k and so the AL8400 output current is within its ratings.
C
L
Choosing R
B
= 11k satisfies the requirements for the AL8400 conformance and sets approximately 1mA in the OUT pin. The required
compensation capacitor can therefore be calculated from:
F18.0
k11
ms2
C
L
μ
Ω
Æ 180nF
The value of R
SET
is V
REF
/I
LED
so:
R
SET
= 0.2/0.15 = 1.333 Î Choosing two 2.7 yields 1.35 giving an approximate 1.3% difference from target.
Finally, the maximum power dissipation of the external bipolar transistor is:
P
TOT
= I
LED
x V
CEMAX
=
I
LED
x (V
CC_max
– V
LED_MIN
– V
FB
) = 0.51W
This determines the package choice (θ
JA
) in order to keep the junction temperature of the bipolar transistor below the maximum value allowed. At
a maximum ambient temperature of +60°C the junction temperature becomes
T
J
= T
A
+ P
TOT
x θ
JA
= 60 + 0.51 x 125 = +123.75°C
N-Channel MOSFET as the Pass Element
Alternatively, an N-channel MOSFET may be used in the same configuration. The current in R
B
is then reduced compared to the case in which
the bipolar transistor is used. For LED currents up to about 400mA a suitable MOSFET is DMN6068SE in the SOT223 package. The design
procedure is as follows, referring to Figure 7.
Figure 7 Application Circuit Using MOSFET
AL8400/ AL8400Q
Document number: DS35115 Rev. 4 - 2
9 of 13
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August 2012
© Diodes Incorporated
AL8400 /
A
L8400Q
Application Information (cont.)
N-Channel MOSFET as the Pass Element (cont.)
The equations (1 and 2) for the bipolar transistor are transformed into:
LED circuit path:
5. V
CC
= (V
LED
+ V
DS
+ V
FB
) where VFB is approximately the internal reference voltage of 200mV.
Control drive circuit path
6. V
CC
= (V
RB
+ V
GS
+ V
FB
)
The maximum total LED voltage plus the reference voltage determines the minimum supply voltage. Substituting into equation 5 yields:
FBDSMINLEDminCC
VVVV ++=
The MOSFET DC gate current is negligible, so the bias resistor R
B
has only to provide the minimum output current of the AL8400. So
rearranging equation 6 yields the boundaries for allowable R
B
values:
7.
maxOUT
FBminGSmaxCC
minB
I
VVV
R
=
8.
minOUT
FBmaxGSminCC
maxB
I
VVV
R
=
Where I
OUTmax
is the AL8400 maximum output current Where I
OUTmin
is the AL8400 minimum output current
Once the value of R
B
has been determined, somewhere between R
Bmax
and R
Bmin
– trying to get I
OUT
close to 1mA for all variations, the value for
compensation capacitor, C
L
, should be calculated.
The MOSFET selection is also influenced by the maximum power dissipation
P
TOT
= I
LED
* (V
CC
– V
LED
– V
FB
) = I
LED
* V
DS
Since this determines the package choice (θ
JA
) in order to keep the junction temperature below the maximum value allowed.
T
J
= T
A
+ P
TOT
θ
JA
where
T
J(MAX)
is the maximum operating junction temperature,
T
A
is the ambient temperature,
θ
JA
is the junction to ambient thermal resistance.
Low Supply Voltages and MOSFET as Pass Element
When driving a single LED at low supply voltages, a low threshold MOSFET or high gain NPN bipolar transistor should be used as the LED driving
pass transistor.
This is because a standard threshold voltage MOSFET might not have enough Gate-Source voltage to ensure that it is sufficiently enhanced to
regulate the LED current.
MOSFET Example Choosing R
B
and C
L
The driver is required to control 3 series connected LEDs at 200mA ±10% from an 12V ±5% supply. Each LED has a forward voltage of 3V
minimum and of 3.6V maximum.
Therefore the minimum supply voltage is 11.4V and the maximum LED chain voltage is 10.8V.
Rearranging equation 5 (page 9); the minimum voltage drop across the MOSFET is required to be:
==×
FBmaxLEDminCCDSLED
VVVRI
V2.0V8.10V4.11
=
= 0.4V Æ R
DS(ON)
2
We will use the DMN6068SE N-channel MOSFET (Q2) with a maximum R
DS(ON)
of 100m at V
GS
= 4.5V.

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