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SIR402DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
SiR402DP
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectification
• DC/DC Point-of-Load
• Server
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
30
0.006 at V
GS
= 10 V
35
12 nC
0.008 at V
GS
= 4.5 V
35
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
SiR402DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-
C
hannel M
OS
FET
G
D
S
Notes:
a. Based on T
C
= 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
35
a
A
T
C
= 70 °C
35
a
T
A
= 25 °C
20.7
b, c
T
A
= 70 °C
16.6
b, c
Pulsed Drain Current I
DM
70
Avalanche Current
L = 0.1 mH
I
AS
35
Avalanche Energy E
AS
61
mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
30
A
T
A
= 25 °C
3.5
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
36
W
T
C
= 70 °C
23
T
A
= 25 °C
4.2
b, c
T
A
= 70 °C
2.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
25 30
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.9 3.5
www.vishay.com
2
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
Vishay Siliconix
SiR402DP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30 V
V
DS
Temperature Coefficient
ΔV
DS
/T
J
I
D
= 250 µA
24
mV/°C
V
GS(th)
Temperature Coefficient
ΔV
GS(th)
/T
J
- 6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.15 2.2 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0048 0.006
Ω
V
GS
= 4.5 V, I
D
= 17.5 A
0.0064 0.008
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
82 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1700
pFOutput Capacitance
C
oss
350
Reverse Transfer Capacitance
C
rss
140
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
28 42
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
12 21
Gate-Source Charge
Q
gs
5.4
Gate-Drain Charge
Q
gd
4.6
Gate Resistance
R
g
f = 1 MHz 1.2 2.4 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5 Ω
I
D
≅ 10 A, V
GEN
= 4.5 V, R
g
= 1 Ω
25 40
ns
Rise Time
t
r
20 30
Turn-Off Delay Time
t
d(off)
25 40
Fall Time
t
f
15 25
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
12 20
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
25 40
Fall Time
t
f
10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
30
A
Pulse Diode Forward Current
I
SM
70
Body Diode Voltage
V
SD
I
S
= 10 A, V
GS
= 0 V
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
25 50 ns
Body Diode Reverse Recovery Charge
Q
rr
17 35 nC
Reverse Recovery Fall Time
t
a
13
ns
Reverse Recovery Rise Time
t
b
12
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
www.vishay.com
3
Vishay Siliconix
SiR402DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10V thru 4 V
V
GS
=2V
V
GS
=3V
0.002
0.004
0.006
0.008
0.010
0 10203040506070
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=10V
0
2
4
6
8
10
0 6 12 18 24 30
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=15V
V
DS
=24V
I
D
=20A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
300
600
900
1200
1500
1800
2100
0 5 10 15 20 25 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
I
D
=20A
V
GS
=10V,4.5V
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR402DP-T1-GE3

Mfr. #:
Buy SIR402DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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