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SIR402DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
Vishay Siliconix
SiR402DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
100
T
J
= 25 °C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.000
0.003
0.006
0.009
0.012
0.015
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=20A
0.001
0
1
50
20
30
10 6000.1
Time (s)
10
40
Power (W)
1000.01
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
1ms
10 ms
100 ms
1s
10 s
DC
Limited byR
DS(on)
*
BVDSS
Limited
100 µs
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
www.vishay.com
5
Vishay Siliconix
SiR402DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
20
40
60
80
0 255075100125150
Package Limited
Power Derating
0
8
16
24
32
40
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 68683
S09-1087-Rev. C, 15-Jun-09
Vishay Siliconix
SiR402DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68683
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1.
Duty Cycle, D =
2. Per Unit Base = R
thJA
= 58 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR402DP-T1-GE3

Mfr. #:
Buy SIR402DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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