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NCP5269MNTWG

P1-P3P4-P6P7-P9P10-P11
NCP5269
http://onsemi.com
4
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CSPCSNCOMP FB
PG PGND
GH
BST
V1V2
V3
AGND
FBRTN
VIN
Cin
Lo
Cout
Vout
R1
R2
C2
C1
C3
EN
VCC
5.0 V
VID1
VID0
PG
VCC
Rset1
Rset2
Rset3
Rset4
VCCP
5.0V
FBRTN
R3
R4
FBRTN
Figure 2. Application Circuit
C
VCCP
C
BOOT
C
SS
VREF
SWN
VCCP
GL/FSET
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Value
VCC to AGND −0.3 V (DC) to 6.5 V
FBRTN, PGND −0.3 V to +0.3 V
SWN to PGND −5.0 V to 28 V, −10.0 V for T < 100 ns
BST, GH to GND −0.3 V to 34 V
BST to SWN, GH to SWN, VCC to PGND, DL to PGND −0.3 V to 6.5 V
All other pins −0.3 V to 6.5 V
Operating Temperature Range, T
A
−40°C to +100°C
Junction Temperature, T
J
−40°C to +100°C
Storage Temperature Range, T
S
−55°C to +150°C
Package Characteristic
Thermal Resistance from Junction−to−Ambient (T
A
= +25°C), R
thja
35 °C/W (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This data is for solder on 4−layer board with 2 oz. copper.
NCP5269
http://onsemi.com
5
Table 3. ELECTRICAL CHARACTERISTICS
(V
CC
= V
CCP
= 5.0 V, V
out
= 1.0 V, T
A
= +25°C for typical value; −40°C < T
A
< 100°C for min/max values unless noted otherwise)
Parameter Symbol Test Conditions Min Typ Max Units
POWER SUPPLY
VCC Operation Voltage V
CC
4.5 5 5.5 V
VCCP Operation Voltage V
CCP
4.5 5 5.5 V
VOLTAGE MONITORING & PROTECTION
VCC Start Threshold 3.9 4.2 4.45 V
VCC UVLO Hysteresis 300 350 400 mV
Power Good Low Voltage I
PG(sink)
= 4 mA 230 300 mV
Power Good High Leakage Current 1.0
mA
Power Good Startup Delay (Note 2) Measure from SSEND to PG
pos edge
3.3 ms
Power Good Propagation Delay
Delay for power good in 3.3 ms
Delay for power good out 1.5
ms
Power Good Threshold
Power Good in from high 101.5 105 107.5 %
Power Good in from low 92.5 95 98.5 %
PG hysteresis 5 %
Power Good Masking Time Triggered by any VID Change 425
ms
FB Overvoltage Threshold V
OVFB
−VID Relative to nominal VID Voltage 150 200 250 mV
Overvoltage Propagation Delay 1.5
ms
FB Over Voltage Threshold During Soft−
Start
2.0 V
FB Under−Voltage Trip Threshold V
UVFB
−VID Relative to nominal VID Voltage −360 −300 −240 mV
Undervoltage Protection Blanking Time 3.3
ms
SUPPLY CURRENT
VCC Quiescent Current I
VCC
V
skip
= 0 V, V
FB
= 1.5 V, EN = 5.0
(No Switching),
GH and GL are open
3.9 5 mA
VCC Shutdown Supply Current I
VCC_SD
EN = 0 V 3
mA
VCCP Quiescent Current I
VCCP
V
skip
= 0 V, V
FB
= 1.5 V, EN = 5.0
(No Switching),
GH and GL are open
0.3 mA
VCCP Shutdown Supply Current I
VCCP_SD
EN = 0 V 1
mA
BST Quiescent Current I
BST
V
skip
= 0 V, V
FB
= 1.5 V, EN = 5.0
(No Switching),
GH and GL are open
0.33 mA
BST Shutdown Supply Current I
BST_SD
EN = 0, BST = 5 V, SWN = 0 1
mA
FEEDBACK VOLTAGE
Reference Voltage V
REF
0.65
V
System Accuracy
VID0 = VID1 = High,
PWM in CCM mode,
−40°C < T
A
< 100°C
−1.0 +1.0 %
T
A
= 25°C −0.35 +0.35 %
Feedback Voltage Line Regulation Vcc = 4.5 V ~ 5.5 V 0.75 %/V
2. Guaranteed by characterization or correlation, not production tested
NCP5269
http://onsemi.com
6
Table 3. ELECTRICAL CHARACTERISTICS
(V
CC
= V
CCP
= 5.0 V, V
out
= 1.0 V, T
A
= +25°C for typical value; −40°C < T
A
< 100°C for min/max values unless noted otherwise)
Parameter UnitsMaxTypMinTest ConditionsSymbol
VOLTAGE ERROR AMPLIFIER
Open Loop DC Gain (Note 2) 80 dB
Open Loop Unity Gain Bandwidth
(Note 2)
F
0dB,EA
20 MHz
FB Input Voltage Range (Note 2) 0 2.0 V
FB Bias Current (Note 2) Relative to CSN = VID
−1
1
mA
Slew Rate COMP pin to GND = 10 pF 10
V/ms
Maximum Output Voltage 10 mV of overdrive,
I
SOURCE
= 2.0 mA
3.3 3.5 V
Minimum Output Voltage 10 mV of overdrive,
I
SINK
= 2.0 mA
0.2 0.3 V
Output Source Current 10 mV of overdrive, V
out
= 3.5 V 2
mA
Output Sink Current 10 mV of overdrive, V
out
= 1.0 V 2
mA
DIFFERENTIAL CURRENT SENSE AMPLIFIER
CSP and CSN Common−mode Input
Voltage Range
Refer to AGND −0.2 2.0 V
Differential Input Voltage Range −30 30 mV
OVER CURRENT PROTECTION
OCP Threshold V(CSP)−V(CSN),
Vo = 1 V
Vo = 0.5 V ~ 1.5 V
27
26
30
30
33
34
mV
2_BITS VID
VID0, VID1 High Threshold Voltage 0.65 V
VID0, VID1 Low Threshold Voltage 0.4 V
VID0, VID1 Input Bias Current VID = 0 V 1 nA
VID0, VID1 Pull Down Current 2.5
mA
Charging current during VID up (Note 2) 73
mA
Discharging current during VID down
(Note 2)
90
mA
VID Delay time Any VID edge to 10% of FB
change
200 ns
EN
EN High Threshold Voltage 1.4 V
EN Low Threshold Voltage 0.4 V
EN Input Bias Current I
EN
EN = 5 V 10
mA
EN Input Voltage 5.5 V
PWM
Minimum Controllable ON Time (Note 2) 30 ns
Minimum OFF Time (Note 2) 300 400 500 ns
PWM Ramp Amplitude (Note 2)
V
IN
= 5 V 1.25 V
V
IN
= 12 V 3 V
2. Guaranteed by characterization or correlation, not production tested
P1-P3P4-P6P7-P9P10-P11

NCP5269MNTWG

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Buy NCP5269MNTWG
Manufacturer:
ON Semiconductor
Description:
Switching Controllers SYSTEM AGENT WITH 2-BIT C
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