IXGH25N100AU1 Datasheet IXGH25N100U1, IXGH25N100AU1 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1000 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 1000 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C50A

I

C90

T

C

= 90°C25A

I

CM

T

C

= 25°C, 1 ms 100 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 33 Ω I

CM

= 50 A

(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

CES

P

C

T

C

= 25°C 200 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (M3) 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 4.5 mA, V

GE

= 0 V 1000 V

V

GE(th)

I

C

= 500 µA, V

CE

= V

GE

2.5 5.5 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 500 µA

V

GE

= 0 V T

J

= 125°C8mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 25N100U1 3.5 V

25N100AU1 4.0 V

V

CES

I

C25

V

CE(sat)

1000 V 50 A 3.5 V

1000 V 50 A 4.0 V

Preliminary data

95587 (9/96)

IXGH25N100U1

IXGH25N100AU1

Low V

CE(sat)

High speed IGBT

with Diode

G

C

E

TO-247 AD (IXGH)

G = Gate C = Collector

E = Emitter TAB = Collector

Features

l International standard package

JEDEC TO-247 AD

l IGBT and anti-parallel FRED in one

package

l 2nd generation HDMOS

TM

process

l

Low V

CE(sat)

- for minimum on-state conduction

losses

l MOS Gate turn-on

- drive simplicity

l Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Applications

l AC motor speed control

l DC servo and robot drives

l DC choppers

l Uninterruptible power supplies (UPS)

l Switch-mode and resonant-mode

power supplies

Advantages

l Saves space (two devices in one

package)

l Easy to mount (isolated mounting

screw hole)

l

Reduces assembly time and cost

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH25N100U1 IXGH25N100AU1

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 8 15 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C

ies

2750 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 270 pF

C

res

50 pF

Q

g

130 180 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

25 60 nC

Q

gc

55 90 nC

t

d(on)

100 ns

t

ri

200 ns

t

d(off)

500 ns

t

fi

25N100AU1 500 ns

E

off

25N100AU1 5 mJ

t

d(on)

100 ns

t

ri

250 ns

E

on

3.5 mJ

t

d(off)

720 1000 ns

t

fi

25N100U1 950 3000 ns

25N100AU1 800 ns

E

off

25N100U1 10 mJ

25N100AU1 6 mJ

R

thJC

0.62 K/W

R

thCK

0.25 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= I

C90

, V

GE

= 0 V, 2.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

I

RM

I

F

= I

C90

, V

GE

= 0 V, -di

F

/dt = 240 A/µs1618A

t

rr

V

R

= 540 V T

J

=125°C 120 ns

I

F

= 1 A; -di/dt = 100 A/µs; V

R

= 30 V T

J

=25°C35 50ns

R

thJC

1 K/W

Inductive load, T

J

= 125

°°

°C

I

C

= I

C90

, V

GE

= 15 V, L = 300 µH

V

CE

= 0.8 V

CES

, R

G

= R

off

= 33 Ω

Remarks: Switching times

may increase

for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

Inductive load, T

J

= 25

°°

°C

I

C

= I

C90

, V

GE

= 15 V, L = 300 µH,

V

CE

= 0.8 V

CES

, R

G

= R

off

= 33 Ω

Remarks: Switching times

may increase

for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-247 AD Outline

IXGH25N100U1 IXGH25N100AU1

IXGH25N100AU1

IXGH25N100AU1

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