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IXGH25N100AU1

P1-P3P4-P6
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N100U1 IXGH25N100AU1
© 1996 IXYS All rights reserved
di
F
/dt - A/µs
0 200 400 600
t
rr
- nanoseconds
0.0
0.2
0.4
0.6
0.8
di
F
/dt - A/µs
200 400 600
I
RM
- Amperes
0
10
20
30
40
50
di
F
/dt - A/µs
1 10 100 1000
Q
r
- nanocoulombs
0
1
2
3
4
T
J
= 100°C
V
R
= 540V
T
J
- Degrees C
0 40 80 120 160
Normalized I
RM
/Q
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
di
F
/dt - A/µs
0 100 200 300 400 500 600
t
fr
- nanoseconds
0
200
400
600
800
1000
V
FR
- Volts
0
10
20
30
40
50
t
fr
V
FR
T
J
= 125°C
I
F
=37A
Voltage Drop - Volts
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Current - Amperes
0
20
40
60
80
100
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
I
F
= 30A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
I
F
= 30A
max.
I
F
= 30A
T
J
= 100°C
V
R
= 540V
T
J
= 100°C
V
R
= 540V
Fig.11 Maximum Forward Voltage Drop Fig.12 Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
Fig.13Junction Temperature Dependence Fig.14 Reverse Recovery Chargee
off I
RM
and Q
r
Fig.15 Peak Reverse Recovery Current Fig.16 Reverse Recovery Time
IXGH25N100U1 IXGH25N100AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N100U1 IXGH25N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
Pulse Width - Seconds
0.001 0.01 0.1 1
R
thJC
- K/W
0.01
0.10
1.00
P1-P3P4-P6

IXGH25N100AU1

Mfr. #:
Buy IXGH25N100AU1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1000V 50A
Lifecycle:
New from this manufacturer.
Delivery:
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