Data Sheet D18896EJ1V0DS
2
NP180N04TUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 2.0 3.0 4.0 V
Forward Transfer Admittance
Note
| y
fs | VDS = 5 V, ID = 45 A 51 107 S
Drain to Source On-state Resistance
Note
R
DS(on) VGS = 10 V, ID = 90 A 1.2 1.5 mΩ
Input Capacitance Ciss VDS = 25 V, 17100 25700 pF
Output Capacitance Coss VGS = 0 V, 1420 2130 pF
Reverse Transfer Capacitance Crss f = 1 MHz 890 1610 pF
Turn-on Delay Time td(on) VDD = 20 V, ID = 90 A, 54 120 ns
Rise Time tr VGS = 10 V, 43 110 ns
Turn-off Delay Time td(off) RG = 0 Ω 104 210 ns
Fall Time tf 21 60 ns
Total Gate Charge QG VDD = 32 V, 260 390 nC
Gate to Source Charge QGS VGS = 10 V, 52 nC
Gate to Drain Charge QGD ID = 180 A 88 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 180 A, VGS = 0 V 0.9 1.5 V
Reverse Recovery Time trr IF = 180 A, VGS = 0 V, 65 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 110 nC
Note Pulsed test
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
VGS
VDS
ton toff
td(on) tr td(off) tf
10% 10%
μ