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NP180N04TUG-E1-AY

P1-P3P4-P6P7-P9P10-P10
Data Sheet D18896EJ1V0DS
5
NP180N04TUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
1
2
3
4
5
-75 -25 25 75 125 175 225
Pulsed
V
GS
= 10 V
I
D
= 90 A
T
ch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
100
1000
10000
100000
0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100 1000
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
5
10
15
20
25
30
35
40
0 40 80 120 160 200 240 280
0
3
6
9
12
V
DS
V
GS
I
D
= 180
A
8 V (160 A)
20 V
V
DD
= 32 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
1
10
100
1000
00.511.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10 100 1000
di/dt = 100 A/
μ
s
V
GS
= 0 V
IF - Diode Forward Current - A
Data Sheet D18896EJ1V0DS
6
NP180N04TUG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
8.4 TYP.
10.0 ± 0.2
7.6 TYP.
8
9.15 ± 0.2
14.85 ± 0.5
1.2 ± 0.3
1.27 TYP.
0.6 ± 0.15
2.5
10.0 ± 0.2
123 5467
4.45 ± 0.2
1.3 ± 0.2
0.025 to 0.25
0.5 ± 0.2
0 to 8°
0.25
2.54 ± 0.25
1. Gata
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D18896EJ1V0DS
7
NP180N04TUG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel sideDraw-out side
MARKING INFORMATION
180N04
Lot code
NEC
UG
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
The NP180N04TUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions
Recommended
Condition Symbol
Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220
°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
P1-P3P4-P6P7-P9P10-P10

NP180N04TUG-E1-AY

Mfr. #:
Buy NP180N04TUG-E1-AY
Manufacturer:
Renesas Electronics
Description:
MOSFET POWER MOSFET
Lifecycle:
New from this manufacturer.
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