BC858AWT1 Datasheet BC858BWT1, BC858AWT1, BC857BWT1 | P1-P3

October, 2005 − Rev. 1

1 Publication Order Number:

BC856BWT1/D

BC856BWT1 Series,

BC857BWT1 Series,

BC858AWT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• Pb−Free Packages are Available

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Collector-Emitter Voltage BC856

BC857

BC858

V

CEO

−65

−45

−30

V

Collector-Base Voltage BC856

BC857

BC858

V

CBO

−80

−50

−30

V

Emitter−Base Voltage V

EBO

−5.0 V

Collector Current − Continuous I

C

−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

A

= 25°C

P

D

150 mW

Thermal Resistance,

Junction−to−Ambient

R

q

JA

883 °C/W

Junction and Storage Temperature T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

http://onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the packag

e

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

xx M G

G

xx = Specific Device Code

M = Date Code*

G = Pb−Free Package

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC856 Series

(I

C

= −10 mA) BC857 Series

BC858 Series

V

(BR)CEO

−65

−45

−30

−

V

Collector−Emitter Breakdown Voltage BC856 Series

(I

C

= −10 mA, V

EB

= 0) BC857B Only

BC858 Series

V

(BR)CES

−80

−50

−30

−

V

Collector−Base Breakdown Voltage BC856 Series

(I

C

= −10 mA) BC857 Series

BC858 Series

V

(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage BC856 Series

(I

E

= −1.0 mA) BC857 Series

BC858 Series

V

(BR)EBO

−5.0

−

V

Collector Cutoff Current (V

CB

= −30 V)

Collector Cutoff Current (V

CB

= −30 V, T

A

= 150°C)

I

CBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain BC856A, BC585A

(I

C

= −10 mA, V

CE

= −5.0 V) BC856B, BC857B, BC858B

BC857C

(I

C

= −2.0 mA, V

CE

= −5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

h

FE

−

125

220

420

90

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

CE(sat)

−

−0.3

−0.65

V

Base−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

BE(sat)

−

−0.7

−0.9

−

V

Base−Emitter On Voltage

(I

C

= −2.0 mA, V

CE

= −5.0 V)

(I

C

= −10 mA, V

CE

= −5.0 V)

V

BE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mA, V

CE

= −5.0 Vdc, f = 100 MHz)

f

T

100 − − MHz

Output Capacitance

(V

CB

= −10 V, f = 1.0 MHz)

C

ob

− − 4.5 pF

Noise Figure

(I

C

= −0.2 mA, V

CE

= −5.0 Vdc, R

S

= 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

3

BC857/BC858

Figure 1. Normalized DC Current Gain

I

C

, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

I

C

, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

I

B

, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

0

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0

−10

0

−20

−0.1

−0.4

−0.8

h

FE

, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2

−10 −100

−1.0

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= −10 V

V

CE

= −10 V

T

A

= 25°C

−55°C to +125°C

I

C

= −100 mA

I

C

= −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1

−0.2 −0.5

−1.0

−2.0 −5.0

−10

−20 −50

−100

I

C

= −200 mAI

C

= −50 mAI

C

=

−10 mA

Figure 5. Capacitances

V

R

, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current−Gain − Bandwidth Product

I

C

, COLLECTOR CURRENT (mAdc)

−0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

T

A

= 25°C

C

ob

C

ib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

V

CE

= −10 V

T

A

= 25°C

T

A

= 25°C

1.0

BC858AWT1

BC858AWT1

Products related to this Datasheet