BC858AWT1

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
http://onsemi.com
4
BC856
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0
−10 −200
−0.2
0.2
0.5
−0.2 −1.0
−10 −200
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= −5.0 V
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0
−10
0
−20
−0.1
−0.4
−0.8
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
−0.2 −2.0
−10 −200
−1.0
T
J
= 25°C
I
C
=
−10 mA
h
FE
, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
V
CE
= −5.0 V
T
A
= 25°C
0
−0.5 −2.0 −5.0
−20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA
−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20
−50 −100
−55°C to 125°C
q
VB
for V
BE
−2.0
−5.0
−20
−50
−100
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0
−2.0 −10
−100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10
−100
V
CE
= −5.0 V
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
−0.5 −5.0 −20
T
J
= 25°C
C
ob
C
ib
8.0
−50 mA
−200 mA
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25°C
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 83.3°C/W MAX
Z
q
JA
(t) = r(t) R
q
JA
R
q
JA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC858
BC857
BC856
The safe operating area curves indicate I
C
−V
CE
lim
-
its of the transistor that must be observed for reliable op
-
eration. Collector load lines for specific circuits must fal
l
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curve
s
are valid for duty cycles to 10% provided T
J(pk)
150°C
.
T
J(pk)
may be calculated from the data in Figure 13. A
t
high case or ambient temperatures, thermal limitation
s
will reduce the power that can be handled to values les
s
than the limitations imposed by the secondary breakdown
.
ORDERING INFORMATION
Device Marking Package Shipping
BC856BWT1
3B
SC−70/SOT−323
3,000 / Tape & Reel
BC856BWT1G SC−70/SOT−323
(Pb−Free)
BC857BWT1
3F
SC−70/SOT−323
3,000 / Tape & Reel
BC857BWT1G SC−70/SOT−323
(Pb−Free)
BC857CWT1
3G
SC−70/SOT−323
3,000 / Tape & Reel
BC857CWT1G SC−70/SOT−323
(Pb−Free)
BC858AWT1
3J
SC−70/SOT−323
3,000 / Tape & Reel
BC858AWT1G SC−70/SOT−323
(Pb−Free)
BC858BWT1
3K
SC−70/SOT−323
3,000 / Tape & Reel
BC858BWT1G SC−70/SOT−323
(Pb−Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
ǒ
mm
inches
Ǔ
SCALE 10:1
A
A2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.7 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
H
E
e1
0.65 BSC
0.425 REF
0.028 REF
0.026 BSC
0.017 REF
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
BC856BWT1/D
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BC858AWT1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 30V PNP
Lifecycle:
New from this manufacturer.
Delivery:
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