Data Sheet ADG708/ADG709
V
DD
= 3 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
B Version C Version
Parameter +25°C
+85°C
+125°C
+25°C
+85°C
+125°C
Unit
Comments
ANALOG SWITCH
Analog Signal Range 0 V to
V
DD
0 V to
V
DD
V
On Resistance (R
ON
) 8 8 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
see Figure 20
On Resistance Match Between
Channels (ΔR
ON
)
0.4 0.4 Ω typ V
S
= 0 V to V
DD
,
I
DS
= 10 mA
1.2 2 1.2 2 Ω max
LEAKAGE CURRENTS V
DD
= 3.3 V
Source Off Leakage, I
S
(Off ) ±0.01 ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
see Figure 21
D
S
D
see Figure 22
±20 ±20 ±0.1 ±0.75 ±6 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 ±0.01 nA typ V
S
= V
D
= 1 V or 3 V;
see Figure 23
±20 ±20 ±0.1 ±0.75 ±6 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 2.0 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
0.005 0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 ±0.1 μA max
Digital Input Capacitance, C
IN
2 2 pF typ
DYNAMIC CHARACTERISTICS
1
t
TRANSITION
18 18 ns typ R
L
= 300 Ω, C
L
= 35 pF;
see Figure 24
30 30 30 30 ns max V
S1
= 2 V/0 V, V
S2
= 0 V/2 V
Break-Before-Make Time
Delay, t
OPEN
8 8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 1 1 1 ns min V
S
= 2 V; see Figure 25
t
ON
(EN) 18 18 ns typ R
L
= 300 Ω, C
L
= 35 pF
30 30 30 30 ns max V
S
= 2 V; see Figure 26
OFF
L
L
15 15 15 15 ns max V
S
= 2 V; see Figure 26
Charge Injection ±3 ±3 pC typ V
S
= 1.5 V, R
S
= 0 Ω,
C
L
= 1 nF; see Figure 27
Off Isolation −60 −60 dB typ R
L
= 50 Ω, C
L
= 5 pF,
f = 10 MHz
L
L
f = 1 MHz; see Figure 28
Channel-to-Channel Crosstalk −60 −60 dB typ R
L
= 50 Ω, C
L
= 5 pF,
f = 10 MHz
−80 −80 dB typ R
L
= 50 Ω, C
L
= 5 pF,
f = 1 MHz; see Figure 29
−3 dB Bandwidth 55 55 MHz typ R
L
= 50 Ω, C
L
= 5 pF;
see Figure 30
Rev. E | Page 5 of 20
