IXXH80N65B4 Datasheet IXXH80N65B4 | P1-P3

IXXH80N65B4

V

CES

= 650V

I

C110

= 80A

V

CE(sat)







2.1V

t

fi(typ)

= 53ns

DS100527B(9/16)

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 AD

G

C

E

Tab

Extreme Light Punch Through

IGBT for 5-30 kHz Switching

Features



Optimized for 5-30kHz Switching



Square RBSOA



Short Circuit Capability



International Standard Package

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

4.0 6.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 500 A

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 80A, V

GE

= 15V, Note 1 1.65 2.10 V

T

J

= 150C 2.00 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 160 A

I

C110

T

C

= 110°C 80 A

I

CM

T

C

= 25°C, 1ms 430 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 3 I

CM

= 160 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 10 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 625 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in.

Weight 6g

XPT

TM

650V IGBT

GenX4

TM

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH80N65B4

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 25 42 S

C

ie

s

3860 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 196 pF

C

res

58 pF

Q

g(on)

120 nC

Q

ge

I

C

= 80A, V

GE

= 15V, V

CE

= 0.5 • V

CES

32 nC

Q

gc

46 nC

t

d(on)

26 ns

t

ri

100 ns

E

on

3.36 mJ

t

d(off)

112 ns

t

fi

53 ns

E

of

f

1.83 mJ

t

d(on)

23 ns

t

ri

102 ns

E

on

5.50 mJ

t

d(off)

128 ns

t

fi

94 ns

E

off

2.70 mJ

R

thJC

0.24 °C/W

R

thCS

0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 80A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

Inductive load, T

J

= 150°C

I

C

= 80A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

TO-247 (IXXH) Outline

1 - Gate

2,4 - Collector

3 - Emitter

IXXH80N65B4

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

10V

9V

11V

8V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

0 5 10 15 20 25

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

11V

13V

12V

8V

9V

14V

7V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.54

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

13V

11V

12V

10V

9V

8V

7V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 80A

I

C

= 40A

I

C

= 160A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 160A

T

J

= 25ºC

80A

40A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

4567891011121314

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

T

J

= 150ºC

IXXH80N65B4

IXXH80N65B4

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