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IXXH80N65B4

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH80N65B4
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
0 50 100 150 200 250 300 350
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
V
CE
= 10V
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 3
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 80A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2016 IXYS CORPORATION, All Rights Reserved
IXXH80N65B4
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3 6 9 1215182124273033
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
30
60
90
120
150
180
3 6 9 1215182124273033
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
40 45 50 55 60 65 70 75 80
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
R
G
= 3
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
R
G
= 3
Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
f i
- Nanoseconds
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
70
90
110
130
150
170
190
210
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 40A, 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH80N65B4
IXYS REF: IXX_80N65B4D1(E7-RZ43) 9-21-16
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
r i
- Nanoseconds
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
16
18
20
22
24
26
28
30
32
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
30
60
90
120
150
180
3 6 9 1215182124273033
R
G
- Ohms
t
r i
- Nanosecond
s
0
20
40
60
80
100
120
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6

IXXH80N65B4

Mfr. #:
Buy IXXH80N65B4
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
Lifecycle:
New from this manufacturer.
Delivery:
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