March 2015
DocID025190 Rev 3
1/13
This is information on a product in full production.
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STP90N6F6
N-channel 60 V, 0.0057 Ω typ., 90 A STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STP90N6F6 60 V 0.0063 Ω 90 A 136 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STP90N6F6 90N6F6 TO-220 Tube
Contents
STP90N6F6
DocID025190 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
STP90N6F6
Electrical ratings
DocID025190 Rev 3
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25 °C 90 A
I
D
Drain current (continuous) at T
C
= 100 °C 70 A
I
DM
(1)
Drain current (pulsed) 360 A
P
TOT
Total dissipation at T
C
= 25 °C 136 W
T
stg
Storage temperature - 55 to 175 °C
T
j
Max. operating junction temperature 175 °C
Notes:
(1)
Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max.
1.1
°C/W
R
thj-amb
Thermal resistance junction-ambient max. 62.5 °C/W
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
)
45 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AV
, V
DD
= 43 V)
152 mJ

STP90N6F6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET POWER MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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