Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 5: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
V
GS
= 0 V, I
D
= 250 µA 60
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 60 V
10 µA
V
GS
= 0 V, V
DS
= 60 V,
T
j
= 125 °C
100 µA
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±20 V
±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2
4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 45 A
0.0057 0.0063 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
- 4295 - pF
C
oss
Output capacitance - 292 - pF
C
rss
Reverse transfer
capacitance
- 190 - pF
Q
g
Total gate charge
V
DD
= 30 V, I
D
= 90 A,
V
GS
= 10 V (see Figure 14:
"Gate charge test circuit")
- 74.9 - nC
Q
gs
Gate-source charge - 19 - nC
Q
gd
Gate-drain charge - 18.3 - nC
R
g
Intrinsic gate
resistance
f = 1 MHz open drain - 2.2 - Ω
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 30 V, I
D
= 45 A
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 13: "Switching times
test circuit for resistive load"
and Figure 18: "Switching time
waveform")
- 22 - ns
t
r
Rise time - 42 - ns
t
d(off)
Turn-off-delay time - 73 - ns
t
f
Fall time - 16 - ns
