IXTH5N100A Datasheet IXTH5N100A, IXTM5N100A, IXTM5N100 | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 1000 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C5A

I

DM

T

C

= 25°C, pulse width limited by T

JM

20 A

P

D

T

C

= 25°C 180 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD (IXTH)

Standard

Power MOSFET

N-Channel Enhancement Mode

TO-204 AA (IXTM)

G = Gate, D = Drain,

S = Source, TAB = Drain

D

G

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 3 mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2 4.5 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J

= 25°C 250 µA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

5N100 2.4 Ω

5N100A 2.0 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

V

DSS

I

D25

R

DS(on)

IXTH / IXTM 5N100 1000 V 5 A 2.4

Ω Ω

Ω

IXTH / IXTM 5N100A 1000 V 5 A 2.0

ΩΩ

Ω

Features

International standard packages

Low R

DS (on)

HDMOS

TM

process

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

Applications

Switch-mode and resonant-mode

power supplies

Motor controls

Uninterruptible Power Supplies (UPS)

DC choppers

Advantages

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

High power density

93009C (4/96)

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

IXTH 5 N100 IXTH 5 N100A

IXTM 5 N100 IXTM 5 N100A

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 0.5 • I

D25

, pulse test 4 6 S

C

iss

2600 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 180 pF

C

rss

45 pF

t

d(on)

35 100 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 I

D25

20 50 ns

t

d(off)

R

G

= 4.7 Ω, (External) 100 200 ns

t

f

30 80 ns

Q

g(on)

88 130 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 I

D25

21 30 nC

Q

gd

38 70 nC

R

thJC

0.7 K/W

R

thCK

0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 5 A

I

SM

Repetitive; pulse width limited by T

JM

20 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= I

S

, -di/dt = 100 A/µs, V

R

= 100 V 900 ns

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 AD (IXTH) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 6.4 11.4 .250 .450

A1 3.42 .135

∅b .97 1.09 .038 .043

∅D 22.22 .875

e 10.67 11.17 .420 .440

e1 5.21 5.71 .205 .225

L 7.93 .312

∅p 3.84 4.19 .151 .165

∅p1 3.84 4.19 .151 .165

q 30.15 BSC 1.187 BSC

R 13.33 .525

R1 4.77 .188

s 16.64 17.14 .655 .675

TO-204AA (IXTM) Outline

Pins 1 - Gate 2 - Source

Case - Drain

1 2 3

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

IXTH 5 N100 IXTH 5 N100A

IXTM 5 N100 IXTM 5 N100A

Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 3 R

DS(on)

vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV/V

G(th)

- Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V

GS(th)

BV

DSS

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

1

2

3

4

5

6

7

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

R

DS(on)

- Normalized

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

D

- Amperes

0246810

R

DS(on)

- Ohms

1.8

2.0

2.2

2.4

2.6

2.8

3.0

V

GS

= 15V

V

GS

= 10V

V

GS

- Volts

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

I

D

- Amperes

0

1

2

3

4

5

6

7

8

9

V

DS

- Volts

0 5 10 15 20 25 30

I

D

- Amperes

0

1

2

3

4

5

6

7

8

9

7V

V

GS

= 10V

I

D

= 2.5A

6V

T

J

= 25°C

T

J

= 25°C

T

J

= 25°C

5N100A

5N100

IXTH5N100A

IXTH5N100A

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