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IXTH5N100A

P1-P3P4-P4
4 - 4
© 2000 IXYS All rights reserved
IXTH 5 N100 IXTH 5 N100A
IXTM 5 N100 IXTM 5 N100A
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
V
DS
- Volts
1 10 100 1000
I
D
- Amperes
0.1
1
10
Gate Charge - nCoulombs
0 1020304050607080
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
0
1
2
3
4
5
6
7
8
9
V
CE
- Volts
0 5 10 15 20 25
Capacitance - pF
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.010
0.100
1.000
C
rss
C
oss
C
iss
10µs
100µs
1ms
10ms
100ms
Single Pulse
Limited by R
DS(on)
V
DS
= 500V
I
D
= 2.5A
I
G
= 10mA
f = 1 MHz
V
DS
= 25V
T
J
= 125°C
T
J
= 25°C
D=0.5
D=0.05
D=0.02
D=0.1
D=0.01
D=0.2
P1-P3P4-P4

IXTH5N100A

Mfr. #:
Buy IXTH5N100A
Manufacturer:
Littelfuse
Description:
MOSFET 5 Amps 1000V 2 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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