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BUK7880-55A/CUX

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
SOT223
BUK7880-55A
N-channel TrenchMOS standard level FET
19 June 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
•
AEC Q101 compliant
•
Low conduction losses due to low on-state resistance
•
Suitable for standard level gate drive sources
3. Applications
•
12 V and 24 V loads
•
Automotive systems
•
General purpose power switching
•
Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 150 °C - - 55 V
I
D
drain current V
GS
= 10 V; T
sp
= 25 °C; Fig. 2; Fig. 3 - - 7 A
P
tot
total power dissipation T
sp
= 25 °C; Fig. 1 - - 8 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 9; Fig. 10
- 68 80 mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 7 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
- - 53 mJ
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
BUK7880-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 June 2015 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
4 D drain
1 32
4
SC-73 (SOT223)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK7880-55A SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
BUK7880-55A/CU SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number Marking code
BUK7880-55A 788055A
BUK7880-55A/CU 788055
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 150 °C - 55 V
V
DGR
drain-gate voltage R
GS
= 20 kΩ - 55 V
V
GS
gate-source voltage -20 20 V
P
tot
total power dissipation T
sp
= 25 °C; Fig. 1 - 8 W
T
sp
= 100 °C; V
GS
= 10 V; Fig. 2 - 5 AI
D
drain current
T
sp
= 25 °C; V
GS
= 10 V; Fig. 2; Fig. 3 - 7 A
I
DM
peak drain current T
sp
= 25 °C; pulsed; t
p
≤ 10 µs; Fig. 3 - 30 A
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK7880-55A/CUX

Mfr. #:
Buy BUK7880-55A/CUX
Manufacturer:
Nexperia
Description:
MOSFET N-channel TrenchMOS standard level FET
Lifecycle:
New from this manufacturer.
Delivery:
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