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BUK7880-55A/CUX

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
BUK7880-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 June 2015 3 / 12
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -55 150 °C
T
j
junction temperature -55 150 °C
Source-drain diode
I
S
source current T
sp
= 25 °C - 7 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
sp
= 25 °C - 30 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 7 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
- 53 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
Fig. 4 [1][2][3][4]- - J
[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 150 °C
[4] Refer to application note AN10273 for further information.
T
sp
(°C)
0 20015050 100
03aa17
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of solder point temperature
Fig. 2. Continuous drain current as a function of solder
point temperature
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
BUK7880-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 June 2015 4 / 12
003aab530
10
-1
1
10
10
2
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µ s
100 µs
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 15 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
- 120 - K/W
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
BUK7880-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 June 2015 5 / 12
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 55 - - VV
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C 50 - - V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C; Fig. 8 2 3 4 V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 8
- - 4.4 VV
GSth
gate-source threshold
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
Fig. 8
1.2 - - V
I
DSS
drain leakage current V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C - 0.05 10 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nA
V
GS
= 10 V; I
D
= 10 A; T
j
= 150 °C;
Fig. 9; Fig. 10
- - 148 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 9; Fig. 10
- 68 80 mΩ
I
DSS
drain leakage current V
DS
= 55 V; V
GS
= 0 V; T
j
= 150 °C - - 500 µA
Dynamic characteristics
Q
G(tot)
total gate charge - 12 - nC
Q
GS
gate-source charge - 2.5 - nC
Q
GD
gate-drain charge
I
D
= 10 A; V
DS
= 44 V; V
GS
= 10 V;
Fig. 11
- 5 - nC
C
iss
input capacitance - 374 500 pF
C
oss
output capacitance - 92 110 pF
C
rss
reverse transfer
capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; Fig. 12
- 62 85 pF
t
d(on)
turn-on delay time - 8 - ns
t
r
rise time - 52 - ns
t
d(off)
turn-off delay time - 17 - ns
t
f
fall time
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 10 Ω
- 9 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 13 - 0.85 1.2 V
t
rr
reverse recovery time - 33 - ns
Q
r
recovered charge
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V
- 31 - nC
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK7880-55A/CUX

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Manufacturer:
Nexperia
Description:
MOSFET N-channel TrenchMOS standard level FET
Lifecycle:
New from this manufacturer.
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