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20110119a
MIO 2400-17E10
Diode
Symbol Conditions Maximum Ratings
I
F80
T
C
= 80°C 2400 A
I
FSM
V
R
= 0 V; T
VJ
= 125°C; t
p
= 10 ms; half-sinewave 22000 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 2400 A; T
VJ
= 25°C 1.65 2.0 V
T
VJ
= 125°C 1.70 V
I
RM
1880 A
t
rr
890 ns
Q
RR
1025 µC
E
rec
720 mJ
R
thJC
0.012 K/W
Forward voltage is given at chip level
V
CC
= 900 V; I
C
= 2400 A;
V
GE
=
±
15 V; R
G
= 0.56Ω; T
VJ
= 125°C
Inductive load; L
σ
= 60 nH
Module
Symbol Conditions Maximum Ratings
T
JM
max junction temperature +150 °C
T
VJ
Operating temperature -40...+125 °C
T
stg
Storage temperature -40...+125 °C
V
ISOL
50 Hz 4000 V~
M
d
Mounting torque Base-heatsink, M6 screws 4 - 6 Nm
Main terminals, M8 screws 8 - 10 Nm
Symbol Conditions Characteristic Values
min. typ. max.
d
A
Clearance distance terminal to base 23 mm
terminal to terminal 19 mm
d
S
Surface creepage terminal to base 33 mm
distance terminal to terminal 33 mm
L
σσ
σσ
σ
Module stray inductance, C to E terminal 10 nH
R
term-chip
*
)
Resistance terminal to chip 0.085 mΩ
R
thCH
per module; λ grease = 1 W/m•K 0.006 K/W
Weight 1500 g
*
)
V = V
CE(sat)
+ R
term-chip
· I
C
resp. V = V
F
+ R
term-chip
· I
F