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MIO2400-17E10

P1-P3P4-P6
© 2011 IXYS All rights reserved
4 - 6
20110119a
MIO 2400-17E10
Fig. 12 Typical diode forward characteristics,
chip level
Fig. 9 Typical switching times vs collector current Fig. 10 Typical switching times vs gate resistor
Fig. 11 Turn-off safe operating area (RBSOA)
Fig. 7 Typical switching energies per pulse
vs collector current
Fig. 8 Typical switching energies per pulse
vs gate resistor
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1000
2000
3000
4000
5000
I
C
[A]
E
on
, E
off
[J]
V
CC
= 900 V
R
G
= 0.56 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
off
E
on
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01234
R
G
[ohm]
E
on
, E
off
[J]
V
CC
= 900 V
I
C
= 2400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
E
off
0.1
1
10
0 1000 2000 3000 4000 5000
I
C
[A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 900 V
R
G
= 0.56 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
t
d(on)
t
d(off)
t
r
t
f
0.1
1
10
012345
R
G
[ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 900 V
I
C
= 2400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
t
d(on)
t
d(off)
t
f
t
r
0
0.5
1
1.5
2
2.5
0 500 1000 1500 2000
V
CE
[V]
I
Cpulse
/ I
C
IC, Chip
IC, Module
V
CC
≤
1300 V
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
00.511.522.5
V
F
[V]
I
F
[A]
125°C
25°C
p h a s e - o u t
© 2011 IXYS All rights reserved
5 - 6
20110119a
MIO 2400-17E10
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
Fig. 15 Thermal impedance vs time
Fig. 13 Typical reverse recovery characteristics
vs forward current
)e-(1R = (t)Z
n
1i
t/-
ic)-(jth
∑
=
i
τ
0
100
200
300
400
500
600
700
800
900
1000
0
1000
2000
3000
4000
5000
I
F
[A]
E
rec
[mJ]
0
500
1000
1500
2000
2500
I
RM
[A], Q
RR
[µC]
V
CC
= 900 V
R
G
= 0.56 ohm
T
vj
= 125 °C
L
σ
= 60 nH
Q
RR
I
RM
E
rec
0
100
200
300
400
500
600
700
800
900
1000
012345
R
G
[ohm]
E
rec
[mJ]
0
200
400
600
800
1000
1200
1400
1600
1800
2000
I
RM
[A], Q
RR
[µC]
V
CC
= 900 V
I
F
= 2400 A
T
vj
= 125 °C
L
σ
= 60 nH
E
rec
I
RM
Q
RR
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-h)
[K/W] IGBT, DIODE
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
i 1 2 3 4
Ri(K/kW)
4.91 1.35 0.444 0.331
IGBT
τ
i
(ms)
189 22 2.4 0.54
Ri(K/kW)
8.17 2.16 0.862 0.885
DIODE
τ
i
(ms)
196 31 7.4 1.4
p h a s e - o u t
© 2011 IXYS All rights reserved
6 - 6
20110119a
MIO 2400-17E10
Outline drawing
'
'
Note: all dimensions are shown in mm
p h a s e - o u t
P1-P3P4-P6

MIO2400-17E10

Mfr. #:
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Manufacturer:
Description:
MOD IGBT SGL SWITCH 1700V E10
Lifecycle:
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