IXFT16N80P Datasheet IXFH16N80P, IXFT16N80P, IXFV16N80PS | P1-P3

G

D

S

G = Gate D = Drain

S = Source TAB = Drain

DS99599E(07/06)

PolarHV

TM

Power MOSFET

V

DSS

= 800 V

I

D25

=16 A

R

DS(on)

≤≤

≤ 600 m

ΩΩ

Ω

t

rr

≤≤

≤ 250 ns

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 μA 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 3.0 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0 V T

J

= 125°C 250 μA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

600 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 800 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 800 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C16A

I

DM

T

C

= 25°C, pulse width limited by T

JM

40 A

I

AR

T

C

= 25°C8A

E

AR

T

C

= 25°C30mJ

E

AS

T

C

= 25°C 1.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

10 V/ns

T

J

≤ 150°C, R

G

= 5 Ω

P

D

T

C

= 25°C 460 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 ° C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220) 11..65/2.5..15 N/lb

Weight TO-247 6.0 g

TO-268 5.0 g

PLUS220 & PLUS220SMD 4.0 g

IXFH 16N80P

IXFT 16N80P

IXFV 16N80P

IXFV 16N80PS

TO-268 (IXFT)

G

S

D (TAB)

TO-247 (IXFH)

G

S

D (TAB)

PLUS220SMD (IXFV...S)

G

S

D

PLUS220 (IXFV)

D (TAB)

Features

z

Fast Recovery diode

z

Unclamped Inductive Switching (UIS)

rated

z

International standard packages

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 16N80P IXFT 16N80P

IXFV 16N80P IXFV 16N80PS

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 9 16 S

C

iss

4600 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 330 pF

C

rss

23 pF

t

d(on)

27 ns

t

r

V

GS

= 10 V, V

DS

= V

DSS,

I

D

= 0.5 I

D25

32 ns

t

d(off)

R

G

= 5 Ω (External) 75 ns

t

f

29 ns

Q

g(on)

71 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

21 nC

Q

gd

23 nC

R

thJC

0.27 °C/W

R

thCS

(TO-247) 0.21 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 16 A

I

SM

Repetitive 48 A

V

SD

I

F

= I

S

, V

GS

= 0 V, pulse test 1.5 V

t

rr

I

F

= 25A, -di/dt = 100 A/μs 150 250 ns

I

RM

V

R

= 100V; V

GS

= 0 V 7 A

Q

RM

0.7 μC

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

4 4.5 5 5.5 6 6.5 7 7.5

V

G S

- Volts

I

D

- Amperes

T

J

= 125

º

C

25

º

C

-40

º

C

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35 40 45 50

I

D

- Amperes

g

f s

- Siemens

T

J

= -40

º

C

25

º

C

125

º

C

IXFH 16N80P IXFT 16N80P

IXFV 16N80P IXFV 16N80PS

Fig. 1. Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

18

20

22

24

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 8A Value

vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 16A

I

D

= 8A

Fig. 5. R

DS(on)

Normalized to I

D

= 8A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 2 4 6 8 10 12 14 16 18 20 22 24

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

18

20

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFT16N80P

IXFT16N80P

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