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DMS2085LSD-13

P1-P3P4-P6P7-P7
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
1 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
ADVANCE INFORMATION
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
Product Summary
MOSFET
V
(
BR
)
DSS
R
DS
(
on
)
max
I
D
-20V
85mΩ @ V
GS
= -10V
-3.3A
125mΩ @ V
GS
= -4.5V
-2.8A
SCHOTTKY DIODE
V
R
V
F max
I
O
20V
400mV @ I
F
= 0.5A
1.0A
470mV @ I
F
= 1.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power Management Functions
• Backlighting
Features and Benefits
• Low Input Capacitance
• MOSFET with Low R
DS(ON)
– Minimize Conduction Losses
• Schottky Diode with Low Forward Voltage Drop
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMS2085LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Top View
Internal Schematic
e3
Q1 P-Channel MOSFET
D
S
G
Chengdu A/T Site
Shanghai A/T Site
D1 Schottky Diode
A
K
A
D
S
K
G
A
K
D
1 4
8 5
S2085LD
WW
YY
1 4
8 5
S2085LD
WW
YY
= Manufacturer’s Marking
S2085LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
2 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.3
-2.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-4.3
-3.4
A
Maximum Body Diode Forward Current (Note 6)
I
S
-1.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-11.2 A
Avalanche Current (Notes 7) L = 5mH
I
AR
-5 A
Avalanche Energy (Notes 7) L = 5mH
E
AR
50 mJ
Maximum Ratings – SCHOTTKY – D1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Output Current (Note 7, t<10s)
I
O
1 A
Peak Repetitive Forward Current (Note 7, t<10s)
I
FRM
2 A
Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)
Single half sine-wave superimposed on rated load
I
FSM
20 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.1
W
T
A
= +70°C
1.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
108
°C/W
t<10s 65
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C
2.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
78
°C/W
t<10s 50
Thermal Resistance, Junction to Case (Note 6)
R
θJC
22
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
3 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics P-Channel Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-0.5 -1.5 -2.2 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
70 85
mΩ
V
GS
= -10V, I
D
= -3.05A
⎯
100 125
V
GS
= -4.5V, I
D
= -1.50A
Diode Forward Voltage
V
SD
⎯
-0.8 -1.0 V
V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
353
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
49
⎯
Reverse Transfer Capacitance
C
rss
⎯
41
⎯
Gate Resistance
R
G
⎯
6.2
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯
3.7
⎯
nC V
DS = -15V, ID = -3A
Total Gate Charge (V
GS
= -10V) Q
g
⎯
7.8
⎯
Gate-Source Charge
Q
gs
⎯
1.1
⎯
Gate-Drain Charge
Q
gd
⎯
1.3
⎯
Turn-On Delay Time
t
D(on)
⎯
3.3
⎯
nS
V
DS = -15V,RL = 15Ω
V
GS = -10V, RG = 6Ω
Turn-On Rise Time
t
r
⎯
3.0
⎯
Turn-Off Delay Time
t
D(off)
⎯
14
⎯
Turn-Off Fall Time
t
f
⎯
6.8
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
33
⎯
nS
I
S
= -3.05A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
46
⎯
nC
I
S
= -3.05A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
3.0
6.0
9.0
12.0
15.0
0 0.5 1 1.5 2 2.5 3
V= -1.8V
GS
V= -2.5V
GS
V= -3.0V
GS
V= -3.5V
GS
V= -10V
GS
V= -4.0V
GS
V= -4.5V
GS
V= -2.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 150 C
A
°
T = 125 C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = -5.0V
DS
P1-P3P4-P6P7-P7

DMS2085LSD-13

Mfr. #:
Buy DMS2085LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
Lifecycle:
New from this manufacturer.
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