DMS2085LSD-13

P1-P3 P4-P6 P7-P7

DMS2085LSD

Document number: DS36926 Rev. 2 - 2

4 of 7

www.diodes.com

August 2014

© Diodes Incorporated

DMS2085LSD

ADVANCE INFORMATION

NEW PRODUCT

I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE ( )

DS(ON)

Ω

0

0.03

0.06

0.09

0.12

0.15

0 3 6 9 12 15

V = -4.5V

GS

V = -10V

GS

I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE ( )

DS(ON)

Ω

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

012345678910

T = -55C

A

°

T = 25C

A

°

T = 85C

A

°

T = 125C

A

°

T = 150C

A

°

V= -4.5V

GS

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variation with Temperature

R

, D

R

AI

N

-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.4

0.8

1.2

1.6

-50 -25 0 25 50 75 100 125 150

V = -10V

I = -5A

GS

D

V = -4.5V

I = -5A

GS

D

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0

0.03

0.06

0.09

0.12

0.15

-50 -25 0 25 50 75 100 125 150

V= -10V

I= A

GS

D

-5

V=5V

I= A

GS

D

-4.

-5

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

-I = 1mA

D

-I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

I, S

O

U

R

C

E

C

U

R

R

EN

T

(A)

S

0

1

2

3

4

5

6

7

8

9

10

0 0.3 0.6 0.9

T= 85C

A

°

1.2 1.5

T= 125C

A

°

T= 150C

A

°

T= -55C

A

°

T= 25C

A

°

DMS2085LSD

Document number: DS36926 Rev. 2 - 2

5 of 7

www.diodes.com

August 2014

© Diodes Incorporated

DMS2085LSD

ADVANCE INFORMATION

NEW PRODUCT

C

, J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 ypical Junction Capacitance

DS

10

100

1000

0 5 10 15 20 25 30

f = 1MHz

C

oss

C

rss

C

iss

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

g

V,

G

A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E (V)

GS

0

2

4

6

8

10

012345678

V = -15V

I= -3A

DS

D

V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

I, D

R

AIN

C

U

R

R

EN

T

(A)

D

0.01

0.1

1

10

100

0.1 1 10 100

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = 4.5V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

DMS2085LSD

Document number: DS36926 Rev. 2 - 2

6 of 7

www.diodes.com

August 2014

© Diodes Incorporated

DMS2085LSD

ADVANCE INFORMATION

NEW PRODUCT

Electrical Characteristics – SCHOTTKY – D1 (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 8)

V

(BR)R

20 35

⎯

V

I

R

= 1mA

Forward Voltage (Note 8)

V

F

⎯

⎯

⎯

⎯

0.40

0.47

V

I

F

= 0.5A

I

F

= 1.0A

Reverse Current (Note 8)

I

R

⎯

30 80 μA

V

R

= 20V

Notes: 8. Short duration pulse test used to minimize self-heating effect.

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Figure 12 Typical Forward Characteristics

I, I

N

S

T

A

N

T

A

N

E

O

U

S F

O

R

WA

R

D

C

U

R

R

E

N

T

(A)

F

0.01

0.1

1

10

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

I , INSTANTANEOUS REVERSE CURRENT (µA)

R

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Figure 13 Typical Reverse Characteristics

1

10

100

1000

10000

100000

02468101214161820

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SO-8

Dim Min Max

A - 1.75

A1 0.10 0.20

A2 1.30 1.50

A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

θ

0° 8°

All Dimensions in mm

Gauge Plane

Seating Plane

Detail ‘A’

Detail ‘A’

E

E1

h

L

D

e

b

A2

A1

A

45

°

7

°~

9

°

A3

0.254

P1-P3 P4-P6 P7-P7

DMS2085LSD-13

Mfr. #:

Buy DMS2085LSD-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr

Lifecycle:

New from this manufacturer.

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DMS2085LSD-13