1/8March 2003
STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D
2
PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
■ AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
TYPE V
CES
V
CE(sat)
I
C
STGB7NB40LZ CLAMPED < 1.50 V14A
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
GS
=0)
CLAMPED V
V
ECR
Reverse Battery Protection 20 V
V
GE
Gate-Emitter Voltage CLAMPED V
I
C
Collector Current (continuous) at 100°C 14 A
R
G
Minimum External Gate Resistor 500 Ω
P
TOT
Total Dissipation at T
C
= 25°C
100 W
Derating Factor 0.66 W/°C
E
CL
Single Pulse Collector to Emitter Avalanche Energy
I
C
=13A;T
j
= 150°C (see fig.1-2)
130 mJ
E
ECAV
Reverse Avalanche Energy
I
C
= 7 A ;f= 100 Hz ; T
c
= 25°C
10 mJ
T
stg
Storage Temperature
–55 to 175 °C
T
j
Operating Junction Temperature
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
