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MV1N8153

P1-P3P4-P6
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 1 of 6
1N8149 – 1N8182
Available
Voidless-Hermetically-Sealed Unidirectional 150 W
Low-Capacitance Transient Voltage Suppressors
DESCRIPTION
This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor
(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where
a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from
the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak
“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability
applications. These devices are also available in axial leaded packages for thru-hole mounting.
“A” Package
Also available in:
“A” MELF package
(surface mount)
1N8149US – 1N8182US
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
High surge current and peak pulse power unidirectional protection for sensitive circuits.
Very low capacitance for high frequency or high baud rate applications.
Bidirectional capability with two devices in anti-parallel (see Figure 5).
Triple-layer passivation.
Internal “Category 1” metallurgical bonds.
Voidless hermetically sealed glass package.
RoHS compliant versions are available.
APPLICATIONS / BENEFITS
High reliability transient protection.
Extremely robust construction.
Working peak “standoff” voltage (V
WM
) from 6.8 to 170 volts.
Available as 150 W peak pulse power (P
PP
) at 10/1000 µs.
Lowest available capacitance for 150 W rated TVS.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Secondary lightning protection per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and T
STG
-55 to +175
o
C
Capacitance at zero volts
C
4
pF
Thermal Resistance junction to ambient
R
θJA
150
o
C/W
Peak Pulse Power at 25
o
C (10µs/1000µs)
P
PP
150
W
Impulse repetition rate (duty factor)
d.f
0.01
%
Steady State (Average) Power @ T
A
= 25
o
C
P
M(AV)
1.0
W
Solder Temperature (10 s maximum)
260
o
C
Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 2 of 6
1N8149 – 1N8182
MQ 1N8149 (e3)
Reliability Level
Blank = Commercial
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
MS (reference JANS)
Type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
V(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
V
(BR)
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
V
WM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
I
D
Standby Current: The current through the device at rated stand-off voltage.
I
(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
I
PP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
V
C
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
P
PP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
C
T
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
V
WIB
Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction.
I
IB
Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (V
WIB
).
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 3 of 6
1N8149 – 1N8182
ELECTRICAL CHARACTERISTICS @ T
A
= 25
o
C unless otherwise noted.
Type
Number
Minimum
Breakdown
Voltage
(V
(BR)
)
Breakdown
Current
(I
(BR)
)
Working
Standoff
Voltage
(V
WM
)
Maximum
Standby
Current
(I
D
)
Maximum
Peak
Clamping
Voltage
(V
C
)
Maximum
Surge
Current
(I
PP
)
Maximum
V
(BR)
Temperature
Coefficient
(α
V(BR)
)
Capacitance
(C
T
)
Inverse
Blocking
Voltage
(V
WIB
)
Blocking
Leakage
Current
(I
IB
)
V
mA
V
A
V
A
%/ºC
pF
V
A
1N8149
1N8150
1N8151
1N8152
1N8153
1N8154
1N8155
1N8156
1N8157
1N8158
1N8159
1N8160
1N8161
1N8162
1N8163
1N8164
1N8165
1N8166
1N8167
1N8168
1N8169
1N8170
1N8171
1N8172
1N8173
1N8174
1N8175
1N8176
1N8177
1N8178
1N8179
1N8180
1N8181
1N8182
7.79
8.65
9.50
10.4
11.4
12.4
13.8
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.0
114.0
124.0
138.0
152.0
171.0
190.0
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
6.8
7.5
8.5
9.0
10.0
11.0
12.0
13.0
15.0
17.0
18.0
20.0
22.0
25.0
28.0
30.0
33.0
36.0
40.0
43.0
47.0
53.0
58.0
64.0
70.0
75.0
82.0
94.0
100.0
110.0
120.0
130.0
150.0
170.0
20
10
10
5
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
12.8
13.5
14.5
15.6
16.9
18.2
20.2
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
93.7
103.0
113.0
125.0
137.0
152.0
168.0
183.0
208.0
225.0
261.0
294.0
11.7
11.1
10.3
9.62
8.88
8.24
7.42
6.73
5.98
5.42
4.92
4.50
4.01
3.60
3.28
3.01
2.80
2.54
2.32
2.14
1.95
1.76
1.60
1.45
1.32
1.20
1.09
0.98
0.89
0.82
0.72
0.67
0.57
0.51
.065
.068
.073
.075
.078
.081
.084
.086
.088
.090
.092
.094
.096
.097
.098
.099
.100
.101
.101
.102
.103
.104
.104
.105
.105
.105
.106
.107
.107
.107
.108
.108
.108
.108
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
P1-P3P4-P6

MV1N8153

Mfr. #:
Buy MV1N8153
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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