MV1N8153

T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 4 of 6
1N8149 1N8182
PULSE TIME (tp) ms to 50% decay point in Figure 2
FIGURE 1
PEAK PULSE POWER VS. PULSE TIME
t Time ms
FIGURE 2
10/1000s CURRENT IMPULSE WAVEFORM
I
PP
Peak Pulse Current - % I
PP
PEAK PULSE POWER (P
PP
) kW
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 5 of 6
1N8149 1N8182
T
A
Ambient Temperature
o
C
FIGURE 3
DERATING CURVE
The TVS low capacitance device configuration described in this data sheet is shown in Figure 4 involving a TVS and a unique
diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS
devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure 4
specified in this data sheet.
FIGURE 4 FIGURE 5
Low Capacitance TVS Bidirectional configuration
(2 Low Capacitance TVS
devices in anti-parallel)
PULSE CONDITIONS
DEFINED IN FIGURES 1 & 2
Peak Pulse Power (P
PP
) or current I
PP
(surge) in percent of 25
o
C rating
Cathode>
>
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 6 of 6
1N8149 1N8182
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension LU lead diameter uncontrolled in this area.
5. In accordance with ASME Y14.5M, diameters are equivalent to x
symbology.
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
BD
0.060
0.085
1.52
2.16
3
BL
0.106
0.175
2.69
4.45
LD
0.028
0.032
0.71
0.81
LL
0.800
1.300
20.32
33.02
LU
0.050
1.27
4

MV1N8153

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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