SA616 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 7 of 31
NXP Semiconductors
SA616
Low-voltage high performance mixer FM IF system
11. Dynamic characteristics
Table 6. Dynamic characteristics
T
amb
=25
C; V
CC
= 3 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 2.4 k
and R18 = 3.3 k
. RF level =
45 dBm; FM modulation = 1 kHz with
8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol Parameter Conditions Min Typ Max Unit
Mixer/oscillator section (external LO = 220 mV RMS value)
f
i
input frequency - 150 - MHz
f
osc
oscillator frequency - 150 - MHz
NF noise figure at 45 MHz - 6.8 - dB
IP3
I
input third-order intercept point 50 source;
f1=45.0MHz;f2=45.06MHz;
input RF level = 52 dBm
- 9- dB
G
p(conv)
conversion power gain matched 14.5 dBV step-up 11 17 - dB
50 source - 2.5 - dB
R
i(RF)
RF input resistance single-ended input - 8 - k
C
i(RF)
RF input capacitance - 3.0 4.0 pF
R
o(mix)
mixer output resistance MIXER_OUT pin 1.25 1.5 - k
IF section
G
amp(IF)
IF amplifier gain 50 source - 44 - dB
G
lim
limiter gain 50 source - 58 - dB
P
i(IF)
IF input power for 3 dB input limiting sensitivity;
R17=2.4k; R18=3.3k
(Figure 21); test at IF_AMP_IN pin
- 105 - dBm
AM
AM rejection 80 % AM 1 kHz - 40 - dB
V
o(aud)
audio output voltage gain of two (2 k AC load) 60 120 - mV
SINAD signal-to-noise-and-distortion ratio IF level 110 dBm - 17 - dB
THD total harmonic distortion 30 45 - dB
S/N signal-to-noise ratio no modulation for noise - 62 - dB
V
o(RSSI)
RSSI output voltage RF; R9 = 2 k
RF level = 118 dBm - 0.3 0.8 V
RF level = 68 dBm 0.7 1.1 2 V
RF level = 23 dBm 1.0 1.8 2.5 V
RSSI(range)
RSSI range - 80 - dB

RSSI
RSSI variation - 2- dB
Z
i(IF)
IF input impedance IF_AMP_IN pin 1.3 1.5 - k
Z
o(IF)
IF output impedance IF_AMP_OUT pin - 0.3 - k
Z
i(lim)
limiter input impedance LIMITER_IN pin 1.3 1.5 - k
Z
o(lim)
limiter output impedance LIMITER_OUT pin - 0.3 - k
V
o(RMS)
RMS output voltage LIMITER_OUT pin - 130 - mV
SA616 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 8 of 31
NXP Semiconductors
SA616
Low-voltage high performance mixer FM IF system
12. Performance curves
RF/IF section (internal LO)
V
o(aud)RMS
RMS audio output voltage V
CC
= 3 V; RF level = 27 dBm - 120 - mV
V
o(RSSI)
RSSI output voltage system; V
CC
=3V;
RF level = 27 dBm
-2.2-V
SINAD signal-to-noise-and-distortion ratio system; RF level = 117 dBm - 12 - dB
Table 6. Dynamic characteristics …continued
T
amb
=25
C; V
CC
= 3 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 2.4 k
and R18 = 3.3 k
. RF level =
45 dBm; FM modulation = 1 kHz with
8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol Parameter Conditions Min Typ Max Unit
Fig 4. Supply current versus ambient temperature
Fig 5. Third order intercept point versus ambient temperature and supply voltage
T
amb
(°C)
55 1255
002aaf410
4
6
I
CC
(mA)
2
65
10585
452515
35
V
CC
= 7.0 V
5.0 V
3.0 V
2.7 V
3
5
T
amb
(°C)
40 906020
002aaf411
11.0
9.0
8.0
IP3
I
(dBm)
14.0
02040 80
10.0
12.0
13.0
V
CC
= 2.7 V
3.0 V
7.0 V
SA616 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 24 July 2012 9 of 31
NXP Semiconductors
SA616
Low-voltage high performance mixer FM IF system
Fig 6. Mixer noise figure versus ambient temperature and supply voltage
Fig 7. Conversion gain versus ambient temperature and supply voltage
T
amb
(°C)
40 906020
002aaf412
6.5
7.5
8.0
NF
(dB)
5.0
02040 80
7.0
6.0
5.5
V
CC
= 2.7 V
3.0 V
7.0 V
T
amb
(°C)
40 906020
002aaf413
17.0
16.5
17.5
18.0
G
p(conv)
(dB)
16.0
02040 80
V
CC
= 2.7 V
3.0 V
7.0 V

SA616DK/03,118

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC MIXR 150MHZ RSSI EQUIP 20SSOP
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New from this manufacturer.
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