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IRL3713STRLPBF

P1-P3P4-P6P7-P9P10-P12
HEXFET
®
Power MOSFET
Notes through are on page 11
D
2
Pak
IRL3713SPbF
TO-220AB
IRL3713PbF
TO-262
IRL3713LPbF
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for Computer
Processor Powe
r
l 100% R
G
Tested
V
DSS
R
DS(on)
max (mW) I
D
30V 3.0@V
GS
= 10V 260A
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Symbol Parameter Units
V
DS
Drain-Source Voltage V
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@Tc = 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
, T
STG
Junction and Storage Temperature Range °C
Symbol Parameter Typ Max Units
θJC
Junction-to-Case
––– 0.45*
qCS
Case-to-Sink, Flat, Greased Surface
0.50 –––
θJA
Junction-to-Ambient
––– 62
θJA
Junction-to-Ambient (PCB Mount)
––– 40
Thermal Resistance
Absolute Maximum Ratings
Max
260
180
1040
30
± 20
2.2
170
°C/W
W
-55 to +175
330
SMPS MOSFET
IRL3713SPbF
1 www.irf.com © 2013 International Rectifier June 21, 2013
Base Part Number
Form Quantity
IRL3713PbF
TO-220
Tube
50
IRL3713PbF
IRL3713SLPbF
TO-262
Tube
50
IRL3713SLPbF
Tube
50
IRL3713SPbF
Tape and Reel Left 800 IRL3713STRLPbF
Tape and Reel Right 800 IRL3713STRRPbF
Package Type
Standard Pack
Orderable Part Numbe r
IRL3713SPbF
D
2
Pak
2 www.irf.com © 2013 International Rectifier June 21, 2013
IRL3713/S/LPbF
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C
––– 2.6 3.0
––– 3.3 4.0
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
––– ––– 50
––– ––– 20
––– ––– 100
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Symbol Parameter Min Typ Max Units
gfs Forward Transconductance 76 ––– ––– S
Q
g
Total Gate Charge ––– 75 110
Q
gs
Gate-to-Source Charge ––– 24 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 37 –––
Q
OSS
Output Gate Charge 61 92
G
Gate Resistance 0.5 ––– 3.4
Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 160 –––
t
d(off)
Turn-Off Delay Time ––– 40 –––
t
f
Fall Time ––– 57 –––
iss
Input Capacitance ––– 5890 –––
oss
Output Capacitance ––– 3130 –––
rss
Reverse Transfer Capacitance ––– 630 –––
Symbol
Parameter Units
E
AS
mJ
I
AR
A
Symbol Parameter Min Typ Max Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
––– 0.80 1.3
––– 0.68 –––
t
rr
Reverse Recovery Time ––– 75 110 ns
Q
rr
Reverse Recovery Charge ––– 140 210 nC
t
rr
Reverse Recovery Time ––– 78 120 ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
T
J
= 125°C, I
F
= 30A, V
R
= 20V
di/dt = 100A/μs
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
R
= 0V
di/dt = 100A/μs
Conditions
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
MOSFET symbol
showing the
–––
Conditions
V
DS
= 15V, I
D
= 30A
I
D
= 30A
V
DS
= 15V
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
1530
46
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 38A
V
GS
= -20V
V
GS
= 4.5V, I
D
= 30A
Max
V
GS
= 4.5V
V
DD
= 15V
I
D
= 30A
R
G
= 1.8
Ω
V
DS
= 24V, V
GS
= 0V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 250μA
Static @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
Diode Characteristics
Avalanche Characteristics
Dynamic @ T
J
= 25°C (unless otherwise specified)
mΩ
I
DSS
Drain-to-Source Leakage Current μA
Avalanche Current
Typ
–––
nA
ns
pF
Single Pulse Avalanche Energy
I
S
––– ––– 260
V
GS
= 0V, V
DS
= 15V
V
SD
Diode Forward Voltage V
A
I
SM
––– ––– 1040
3 www.irf.com © 2013 International Rectifier June 21, 2013
IRL3713/S/LPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
1
10
100
1000
2.5 3.0 3.5 4.0 4.5
V = 15V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
260A
P1-P3P4-P6P7-P9P10-P12

IRL3713STRLPBF

Mfr. #:
Buy IRL3713STRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 200A 3mOhm 75nC Log Lvl
Lifecycle:
New from this manufacturer.
Delivery:
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