IRL3713PBF

IRL3713PBF
Mfr. #:
IRL3713PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB
Lifecycle:
New from this manufacturer.
Datasheet:
IRL3713PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL3713PBF DatasheetIRL3713PBF Datasheet (P4-P6)IRL3713PBF Datasheet (P7-P9)IRL3713PBF Datasheet (P10-P12)
ECAD Model:
More Information:
IRL3713PBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
200 A
Rds On - Drain-Source Resistance:
4 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
75 nC
Pd - Power Dissipation:
200 W
Configuration:
Single
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001567066
Unit Weight:
0.211644 oz
Tags
IRL3713, IRL371, IRL37, IRL3, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
***ure Electronics
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***p One Stop Japan
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ment14 APAC
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRL3713PBF
DISTI # V99:2348_13892846
Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
35
  • 10000:$0.9391
  • 5000:$0.9767
  • 2000:$1.0173
  • 1000:$1.0965
  • 500:$1.2750
  • 100:$1.4716
  • 10:$1.8729
  • 1:$2.4139
IRL3713PBF
DISTI # V36:1790_13892846
Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
0
    IRL3713PBF
    DISTI # IRL3713PBF-ND
    Infineon Technologies AGMOSFET N-CH 30V 260A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    971In Stock
    • 5000:$1.0761
    • 3000:$1.1175
    • 1000:$1.2002
    • 100:$1.7631
    • 25:$2.0692
    • 10:$2.1940
    • 1:$2.4400
    IRL3713PBF
    DISTI # 33623233
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant
    4450
    • 50:$1.3531
    IRL3713PBF
    DISTI # 32139747
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant
    2600
    • 100:$0.9430
    • 11:$0.9900
    IRL3713PBF
    DISTI # 30614044
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant
    450
    • 100:$1.7085
    • 15:$1.7212
    IRL3713PBF
    DISTI # 26198447
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant
    35
    • 10000:$0.9391
    • 5000:$0.9767
    • 2000:$1.0173
    • 1000:$1.0965
    • 500:$1.2750
    • 100:$1.4716
    • 10:$1.8729
    • 8:$2.1945
    IRL3713PBF
    DISTI # IRL3713PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 1000
    Asia - 5000
    • 2000:$0.6388
    • 1000:$0.6394
    IRL3713PBF
    DISTI # SP001567066
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB (Alt: SP001567066)
    RoHS: Compliant
    Min Qty: 1
    Europe - 3050
    • 1000:€0.9309
    • 500:€0.9649
    • 100:€1.0029
    • 50:€1.0429
    • 25:€1.0859
    • 10:€1.1849
    • 1:€1.3039
    IRL3713PBF
    DISTI # IRL3713PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 343
    Container: Bulk
    Americas - 0
    • 3430:$0.9279
    • 1715:$0.9459
    • 1029:$0.9829
    • 686:$1.0219
    • 343:$1.0649
    IRL3713PBF
    DISTI # IRL3713PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 10000:$0.7639
    • 6000:$0.7779
    • 4000:$0.8049
    • 2000:$0.8359
    • 1000:$0.8669
    IRL3713PBF
    DISTI # 38K3061
    Infineon Technologies AGMOSFET Transistor, N Channel, 200 A, 30 V, 3 mohm, 10 V, 2.5 V RoHS Compliant: Yes0
    • 5000:$0.9890
    • 2500:$1.0300
    • 1000:$1.1100
    • 500:$1.3300
    • 100:$1.5300
    • 10:$1.9100
    • 1:$2.2400
    IRL3713PBF
    DISTI # 70017434
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 260A,TO-220AB,PD 330W,-55de
    RoHS: Compliant
    0
    • 1:$3.0200
    • 10:$2.6600
    • 100:$2.3300
    • 500:$2.0200
    • 1000:$1.7800
    IRL3713PBF
    DISTI # 942-IRL3713PBF
    Infineon Technologies AGMOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB
    RoHS: Compliant
    991
    • 1:$2.2200
    • 10:$1.8900
    • 100:$1.5100
    • 500:$1.3200
    • 1000:$1.1000
    • 2000:$1.0200
    • 5000:$0.9790
    IRL3713PBFInfineon Technologies AGSingle N-Channel 30 V 4 mOhm 110 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant
    7377Tube
    • 25:$1.6200
    • 100:$1.0300
    • 250:$0.9450
    • 500:$0.8800
    • 1000:$0.8250
    IRL3713PBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    48
    • 1000:$0.9600
    • 500:$1.0100
    • 100:$1.0500
    • 25:$1.1000
    • 1:$1.1800
    IRL3713PBF
    DISTI # 8303293
    Infineon Technologies AGHEXFET N-CH MOSFET 260A 30V TO-220AB, PK40
    • 500:£0.9420
    • 250:£1.0380
    • 100:£1.0880
    • 50:£1.3580
    • 5:£1.7040
    IRL3713PBF
    DISTI # 8303293P
    Infineon Technologies AGHEXFET N-CH MOSFET 260A 30V TO-220AB, TU35
    • 500:£0.9420
    • 250:£1.0380
    • 100:£1.0880
    • 50:£1.3580
    IRL3713PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***48
    • 47:$1.4300
    • 14:$1.6250
    • 1:$2.6000
    IRL3713PBF
    DISTI # 8659788
    Infineon Technologies AGMOSFET, N, 30V, 200A, TO-220
    RoHS: Compliant
    0
    • 500:$2.0300
    • 100:$2.3300
    • 10:$2.9100
    • 1:$3.4200
    IRL3713PBF
    DISTI # 8659788
    Infineon Technologies AGMOSFET, N, 30V, 200A, TO-2200
    • 500:£1.0200
    • 250:£1.1000
    • 100:£1.1700
    • 10:£1.4700
    • 1:£1.9500
    IRL3713PBF
    DISTI # XSKDRABS0023784
    Infineon Technologies AGInsulatedGateBipolarTransistor,40AI(C),600VV(BR)CES,N-Channel,TO-247AC
    RoHS: Compliant
    2450 in Stock0 on Order
    • 2450:$1.4040
    • 550:$1.5000
    IRL3713PBF
    DISTI # XSFP00000002723
    Infineon Technologies AGPower Field-Effect Transistor, 49AI(D),55V,0.0175ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-262AA
    RoHS: Compliant
    3983 in Stock0 on Order
    • 3983:$1.8700
    • 98:$2.0600
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    Availability
    Stock:
    989
    On Order:
    2972
    Enter Quantity:
    Current price of IRL3713PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.22
    $2.22
    10
    $1.89
    $18.90
    100
    $1.51
    $151.00
    500
    $1.32
    $660.00
    1000
    $1.10
    $1 100.00
    2000
    $1.02
    $2 040.00
    5000
    $0.98
    $4 895.00
    10000
    $0.94
    $9 410.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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