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VVZB120-16ioX

P1-P3P4-P6
VVZB120-16ioX
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Thyristor Module
C7
O1
G7
L7
S1
W10
W1
M1
I1
E1
O10
Part number
VVZB120-16ioX
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● X2PT - 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
● 3~ Rectifier with brake unit
for drive inverters
V2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
RRM
1600
I 180
FSM
700
DAV
V
=
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 180
CE(sat)
1.7
C25
V
=
=
=
V
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
I
A
V
T
1.27
R
0.5 K/W
180
V
V
50T = 25°C
VJ
T = °C
VJ
mA20V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
250 WT = 25°C
C
60
1600
forward voltage drop
total power dissipation
Conditions
Unit
1.90
T = 25°C
VJ
150
V
T0
V0.83T = °C
VJ
150
r
T
6.9
mΩ
V1.25T = °C
VJ
I = A
T
V
60
2.04
I = A180
I = A180
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
V1600T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
54
junction capacitance
V = V400 T = 25°Cf = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t
T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
300 µs
DAV
d =rectangular ⅓
bridge output current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt)
T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R =
∞; method 1 (linear voltage rise)
VJ
D
VJ
180 A
T
P
G
= 0.45
di /dt A/µs;
G
=
0.45
DRM
cr
V =
⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
D
VJ
95 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 60 V =
⅔ V
DRM
t
µs
p
= 200
non-repet., I = 60 A
T
125
R
thCH
0.100
thermal resistance case to heatsink
K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
180
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
Conditions
Unit
140
V
V
CE(sat)
total power dissipation
500
W
collector emitter leakage current
7.5
V
turn-on delay time
230
ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
300
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
1.9
6.86
mA
0.1 mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
340
nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
70 ns
380
ns
230
ns
12.5
mJ
11.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE
C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
450
A
R
thJC
thermal resistance junction to case
0.10
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.75
V
VJ
1.60T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.25
mA
VJ
1T = 125°C
VJ
I
R
R RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
5.2
µC
50
A
300
ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
1.9 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0.9
K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
4
100
100
30
30
6.8
6.8
6.8
600
720
1000
600
I
CM
1.7
R
thCH
thermal resistance case to heatsink
0.25
K/W
0.3
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
P1-P3P4-P6

VVZB120-16ioX

Mfr. #:
Buy VVZB120-16ioX
Manufacturer:
Littelfuse
Description:
Bridge Rectifiers Thyristor Module Rectifier Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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