0.001 0.01 0.1 1
400
500
600
700
800
900
2 3 4 5 6 7 8 9 011
10
3
10
0 10 20 30 40 50 60 70
0
20
40
60
80
0 20 40 60 80 100 120 140 160
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
50Hz, 80% V
RRM
0.0 0.5 1.0 1.5 2.0
0
50
100
150
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
I
2
t
[A
2
s]
I
FSM
[A]
t [s]
I
F
A]
V
F
[V] t [ms]
P
tot
W]
I
F(AV)M
T]A[
amb
[°C]
I
dAV
[A]
T
C
[°C]
t [s]
thJC
K/W]
R
thA
:
0.1 K/W
0.3 K/W
0.6 K/W
1.0 K/W
1.5 K/W
2.5 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
Constants for Z
thJC
calculation:
i R
th
(K/W) t
i
(s)
1 0.040 0.004
2 0.003 0.010
3 0.140 0.030
4 0.120 0.300
5 0.197 0.080
Thyristor
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20170405fData according to IEC 60747and per semiconductor unless otherwise specified
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