4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
200
400
600
800
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
V = 80V
V = 50V
V = 20V
FOR TEST CIRCUIT
SEE FIGURE 13
I = 6.0A
D
DS
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
T = 175°C
J
0.1
1
10
100
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10μs
100μs
1ms
10ms
T = 25°C
T = 175°C
Single Pulse
C
J