IRLU120NPBF

Mfr. #:: IRLU120NPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
Lifecycle:: New from this manufacturer.
Datasheet:: IRLU120NPBF Datasheet
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HTML Datasheet:: IRLU120NPBF Datasheet IRLU120NPBF Datasheet (P4-P6)IRLU120NPBF Datasheet (P7-P9)IRLU120NPBF Datasheet (P10-P11)
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 265 mOhms

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 13.3 nC

Pd - Power Dissipation:: 39 W

Configuration:: Single

Packaging:: Tube

Height:: 6.22 mm

Length:: 6.73 mm

Transistor Type:: 1 N-Channel

Width:: 2.38 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SP001567330

Unit Weight:: 0.139332 oz

Tags: IRLU120N, IRLU12, IRLU1, IRLU, IRL

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLU120NPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***trelec: MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

***ark: MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ical: Trans MOSFET N-CH 100V 10A 3-Pin (3+Tab) TO-251 Rail

***ser: MOSFETs 10a,100V, 0.165 Ohm 1Ch HS Logic Gate

***ter Electronics: PWR MOS 100V/11A/0.178 OHM N-CH LOGIC LVL TO-251AA

***SIT Distribution GmbH: Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***SIT Distribution GmbH: Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

***ment14 APAC: MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ohm; ID 17A; I-Pak (TO-251AA); PD 79W

***ure Electronics: Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...+175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 79 W

***el Electronic: Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.105Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:52W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:IPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W

***ineon SCT: -100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK

***SIT Distribution GmbH: Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***ure Electronics: Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***ark: N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Market price

Part #	Mfg.	Description	Stock	Price
IRLU120NPBF DISTI # 26749316	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	12144	2000:$0.2256 400:$0.2496 49:$0.2640
IRLU120NPBF DISTI # 30606834	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2990	100:$0.4577 50:$0.5266 38:$0.6770
IRLU120NPBF DISTI # IRLU120NPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 10A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	25In Stock	1000:$0.3631 500:$0.4539 100:$0.6127 10:$0.7940 1:$0.9100
IRLU120NPBF DISTI # C1S322000631854	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2990	100:$0.3590 50:$0.4130 10:$0.5310
IRLU120NPBF DISTI # C1S322000505249	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	12150	1000:$0.3550 500:$0.3870 100:$0.4710 50:$0.5280 10:$0.7260 1:$2.9000
IRLU120NPBF DISTI # IRLU120NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK (Alt: IRLU120NPBF) RoHS: Compliant Min Qty: 3000	Asia - 0
IRLU120NPBF DISTI # IRLU120NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRLU120NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$0.4479 10:$0.3939 25:$0.3929 50:$0.3919 100:$0.3379 500:$0.3379 1000:$0.2629
IRLU120NPBF DISTI # 38K3011	Infineon Technologies AG	MOSFET Transistor, N Channel, 10 A, 100 V, 185 mohm, 10 V, 2 V RoHS Compliant: Yes	2865	1:$0.7700 10:$0.6400 100:$0.4130 500:$0.3720 1000:$0.3310 2500:$0.3000 10000:$0.2690
IRLU120NPBF DISTI # 70017413	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.185Ohm,ID 10A,I-Pak (TO-251AA),PD 48W RoHS: Compliant	4	1:$0.7750 10:$0.6840 100:$0.5960 500:$0.5170 1000:$0.4560
IRLU120NPBF	Infineon Technologies AG	Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET Power Mosfet - TO-251AA RoHS: Compliant	2175Tube	40:$0.3300 400:$0.2950 1750:$0.2600
IRLU120NPBF DISTI # 942-IRLU120NPBF	Infineon Technologies AG	MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv RoHS: Compliant	316	1:$0.7700 10:$0.6400 100:$0.4130 1000:$0.3310
IRLU120NPBF	International Rectifier	Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	75	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
IRLU120NPBF DISTI # 5431718	Infineon Technologies AG	MOSFET N-CHANNEL 100V 10A IPAK, PK	2180	5:£0.5960 25:£0.3620 100:£0.2400 250:£0.2300 500:£0.2260
IRLU120NPBF DISTI # 8651345	Infineon Technologies AG	MOSFET, N, 100V, 11A, I-PAK RoHS: Compliant	3026	1:$1.2200 10:$1.0200 100:$0.6540 1000:$0.5240 3000:$0.4410 9000:$0.4260 24000:$0.4090
IRLU120NPBF DISTI # 8651345	Infineon Technologies AG	MOSFET, N, 100V, 11A, I-PAK RoHS: Compliant	2895	5:£0.5560 25:£0.3340 100:£0.2450 250:£0.2350 500:£0.2310

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IRLU120NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes