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STN83003

P1-P3P4-P6P7-P9P10-P11
December 2010 Doc ID 12325 Rev 3 1/11
11
STN83003
High voltage fast-switching
NPN power transistor
Features
■ High voltage capability
■ Very high switching speed
Application
■ Electronics ballasts for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability. It
uses a cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA. The STN83003 is
expressly designed for a new solution to be used
in compact fluorescent lamps, where it is coupled
with the STN93003, its complementary PNP
transistor.
I
Figure 1. Internal schematic diagram
SOT-223
1
2
4
3
Table 1. Device summary
Part number Marking Package Packaging
STN83003 N83003 SOT-223 Tape and reel
www.st.com
Contents STN83003
2/11 Doc ID 12325 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STN83003 Electrical ratings
Doc ID 12325 Rev 3 3/11
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage
(I
C
= 0, I
B
= 0.75 A, t
P
< 10 µs)
V
(BR)EBO
V
I
C
Collector current 1.5 A
I
CM
Collector peak current (t
P
< 5 ms) 3 A
I
B
Base current 0.75 A
I
BM
Base peak current (t
P
< 5 ms) 1.5 A
P
TOT
Total dissipation at T
a
= 25 °C 1.6 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJA
Thermal resistance junction-ambient
(1)
_max
1. Device mounted on PCB area of 1 cm².
78 °C/W
P1-P3P4-P6P7-P9P10-P11

STN83003

Mfr. #:
Buy STN83003
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High voltage fast-switching NPN power transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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