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STN83003

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics STN83003
4/11 Doc ID 12325 Rev 3
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T
C
= 125 °C
1
5
mA
mA
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 10 mA 12 18 V
V
CE(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 10 mA 400 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 0.35 A I
B
= 50 mA
I
C
= 0.5 A I
B
= 0.1 A
1
0.5
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 0.5 A I
B
= 0.1 A 1 V
h
FE
DC current gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.35 A V
CE
= 5 V
I
C
= 1 A V
CE
= 5 V
10
16
4
25 32
t
r
t
s
t
f
Resistive load
Rise time
Storage time
Fall time
I
C
= 0.35 A V
CC
= 125 V
I
B1
= - I
B2
= 70 mA
t
P
≥ 25 µs
1.5
100
2.2
0.2
2.9
ns
µs
µs
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 0.5 A I
B1
= 0.1 A
V
BE(off)
= - 5 V L = 10 mH
V
Clamp
= 300 V
450
90
ns
ns
STN83003 Electrical characteristics
Doc ID 12325 Rev 3 5/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (V
CE
= 5 V) Figure 5. DC current gain (V
CE
= 1 V)
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Electrical characteristics STN83003
6/11 Doc ID 12325 Rev 3
Figure 8. Resistive load fall time Figure 9. Resistive load storage time
Figure 10. Inductive load fall time Figure 11. Inductive load storage time
Figure 12. Reverse biased SOA
P1-P3P4-P6P7-P9P10-P11

STN83003

Mfr. #:
Buy STN83003
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High voltage fast-switching NPN power transistor
Lifecycle:
New from this manufacturer.
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