© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 14
1 Publication Order Number:
BDV65B/D
BDV65B(NPN),
BDV64B(PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
Features
• High DC Current Gain − HFE = 1000 (min) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous
− Peak
I
C
10
20
Adc
Base Current I
B
0.5 Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
125
1.0
W
W/°C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
-65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.0 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−93
(TO−218)
CASE 340D
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
http://onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
COLLECTOR 2
BASE
1
EMITTER 3
NPN PNP
BDV65B BDV64B
3
2
1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
