BDV65B (NPN), BDV64B (PNP)
http://onsemi.com
4
10K
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (A)
0.1 1
1K
h
FE
, DC CURRENT GAIN
4
10
NPN PNP
V
CE
= 4 V
I
C
, COLLECTOR CURRENT (A)
0.1 1
h
FE
, DC CURRENT GAIN
10
Figure 3. DC Current Gain
10K
1K
1
10
0.1
I
C
, COLLECTOR CURRENT (A)
10
0.1
V
BE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (V)
Figure 4. “On” Voltages
1
1
10
I
C
, COLLECTOR CURRENT (A)
0.1
V, VOLTAGE (V)
1
Figure 5. “On” Voltages
0.1 101
V
BE(sat)
@ I
C
/I
B
= 250
Figure 6. Active Region Safe Operating Area
100
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
50
20
5
10 50 100
SECONDARY BREAKDOWN
LIMITED @ T
J
v 150°C
THERMAL LIMIT @ T
C
= 25°C
BONDING WIRE LIMIT
I
C
, COLLECTOR CURRENT (A)
BDV65B, BDV64B
dc
5.0 ms
1.0 ms
100 μs
10
1
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150°C, T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150°C. T
J(pk)
may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
