BTS436L2
Semiconductor Group Page 3 2003-Oct-01
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
24 V
Load dump protection
1
)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R
I
2
)
= 2 Ω, R
L
= 4.0 Ω, t
d
= 200 ms, IN= low or high
V
Load dump
3
60 V
Load current (Current limit, see page 5) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
≤ 25 °C P
tot
75 W
Maximal switchable inductance, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.
(See diagram on page 8) I
L(ISO)
= 9.8 A, R
L
= 0 Ω, E
4
)
AS
=0.33J:
Z
L
5.0 mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC) V
IN
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
I
IN
I
ST
±2.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
device on pcb
5
)
:
R
thJC
R
thJA
--
--
--
--
--
33
1.75
75
--
K/W
1
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended).
2
)
R
I
= internal resistance of the load dump test pulse generator
3
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4
)
E
AS
is the maximum inductive switch-off energy
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
