BTS436L2
Semiconductor Group Page 4 2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A; V
BB
7V T
j
=25 °C:
T
j
=150 °C:
see diagram, page 9
R
ON
--
35
64
38
72
m
Nominal load current, (pin 3 to 5)
ISO 10483-1, 6.7:V
ON
=0.5V, T
C
=85°C
I
L(ISO)
8.8
9.8 -- A
Output current (pin 5) while GND disconnected or
GND pulled up
6
)
, V
bb
=30 V, V
IN
= 0,
see diagram page 7
I
L(GNDhigh)
-- -- 2 mA
Turn-on time IN to 90% V
OUT
:
Turn-off time IN to 10% V
OUT
:
R
L
= 12 ,
t
on
t
off
50
50
100
120
200
250
µs
Slew rate on
10 to 30% V
OUT
, R
L
= 12 ,
dV /dt
on
0.1 -- 1 V/µs
Slew rate off
70 to 40% V
OUT
, R
L
= 12 ,
-dV/dt
off
0.1 -- 1 V/µs
Operating Parameters
Operating voltage T
j
=-40
T
j
=+25...+150°C:
V
bb(on)
4.75 --
--
41
43
V
Overvoltage protection
7
)
T
j
=-40°C:
I
bb
=40 mA T
j
=25...+150°C:
V
bb(AZ)
41
43
--
47
--
52
V
Standby current (pin 3)
8)
T
j
=-40...+25°C:
V
IN
=0; see diagram on page 9 T
j
= 150°C:
I
bb(off)
--
--
5
--
8
25
µA
Off-State output current (included in I
bb(off)
)
VIN=0
I
L(off)
-- 1 10 µA
Operating current
9
)
, V
IN
=5 V
I
GND
-- 0.8 1.4 mA
6
)
not subject to production test, specified by design
7
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended. See also V
ON(CL)
in table of protection functions and
circuit diagram page 7.
8
)
Measured with load
9
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS436L2
Semiconductor Group Page 5 2003-Oct-01
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, V
bb
= 12 V unless otherwise specified
min typ max
Protection Functions
10)
Current limit (pin 3 to 5) I
L(lim)
(see timing diagrams on page 11) T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
46
39
30
58
51
38
68
58
46
A
Repetitive short circuit shutdown current limit I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 11) -- 40 -- A
Thermal shutdown time
11)
T
j,start
= 25°C:
(see timing diagrams on page 11)
t
off(SC)
-- 1.9 -- ms
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA:
V
ON(CL)
41
43
47 52 V
Thermal overload trip temperature T
jt
150 -- -- °C
Thermal hysteresis
T
jt
-- 10 -- K
Reverse battery (pin 3 to 1)
12)
-V
bb
-- -- 32 V
Reverse battery voltage drop (V
out
> V
bb
)
13 )
I
L
= -2 A T
j
=150 °C:
-V
ON(rev)
--
600 -- mV
Diagnostic Characteristics
Open load detection current
(on-condition)
I
L (OL)
100 -- 900 mA
Input and Status Feedback
14
)
Input resistance
see circuit page 7
R
I
2.5 3.5 6 k
Input turn-on threshold voltage V
IN(T+)
1.7 -- 3.2 V
Input turn-off threshold voltage V
IN(T-)
1.5 -- -- V
Input threshold hysteresis V
IN(T)
-- 0.5 -- V
Off state input current (pin 2), V
IN
= 0.4 V I
IN(off)
1 -- 50 µA
On state input current (pin 2), V
IN
= 5 V I
IN(on)
20 50 90 µA
Delay time for status with open load after switch off
(see timing diagrams on page 11)
t
d(ST OL4)
100 520 900 µs
Status output (open drain)
Zener limit voltage I
ST
= +1.6 mA:
ST low voltage I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
10
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
12
)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
13
)
not subject to production test, specified by design
14
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
BTS436L2
Semiconductor Group Page 6 2003-Oct-01
Truth Table
Input Output Status
level
level BTS 436L2
Normal
operation
L
H
L
H
H
H
Open load L
H
Z
H
H
L
Overtem-
perature
L
H
L
L
H
L
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)

BTS436L2S

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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