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NTD50N03R-1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
NTD50N03R/D
NTD50N03R
Power MOSFET
25 V, 45 A, Single N−Channel, DPAK
Features
• Planar Technology
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Pb−Free Packages are Available
Applications
• VCORE DC−DC Buck Converter Applications
• Optimized for High Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JA
)
(Note 1)
Steady
State
T
A
= 25°C
I
D
9.2
A
T
A
= 85°C 7.2
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.1 W
Continuous Drain
Current (R
q
JA
)
(Note 2)
T
A
= 25°C
I
D
7.8
A
T
A
= 85°C 6.0
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.5 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
45
A
T
C
= 85°C 35
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
50 W
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
180 A
Current Limited by
Package
T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage
Temperature
T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
45 A
Drain−to−Source (dv/dt) dv/dt 8.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 6.32 A
pk
, L = 1.0 mH, R
G
= 25 W)
E
AS
20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y = Year
WW = Work Week
T50N03R = Device Code
G = Pb−Free Package
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
Gate
YWW
T50
N03RG
YWW
T50
N03RG
25 V
12.5 mW @ 10 V
R
DS(on)
TYP
45 A
I
D
MAXV
(BR)DSS
http://onsemi.com
19 mW @ 4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
D
S
G
N−Channel
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lea
d)
1
2
3
4
1
2
3
4
NTD50N03R
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
3.0
°C/W
Junction−to−Ambient − Steady State (Note 3)
R
q
JA
71.4
Junction−to−Ambient − Steady State (Note 4)
R
q
JA
100
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−16 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.5 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.7 2.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
−5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 11.5 V
I
D
= 30 A 12 mW
I
D
= 15 A 11.7
V
GS
= 10 V I
D
= 30 A 12.5 14
V
GS
= 4.5 V
I
D
= 30 A 21
I
D
= 15 A 19 23
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 15 A 15 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
610 750
pF
Output Capacitance C
oss
300
Reverse Transfer Capacitance C
rss
125
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
6.0 10
nC
Threshold Gate Charge Q
G(TH)
0.9
Gate−to−Source Charge Q
GS
1.9
Gate−to−Drain Charge Q
GD
3.7
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
15
nC
Threshold Gate Charge Q
G(TH)
1.0
Gate−to−Source Charge Q
GS
1.9
Gate−to−Drain Charge Q
GD
3.9
3. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
NTD50N03R
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued) (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0 W
8.2
ns
Rise Time t
r
9.6
Turn−Off Delay Time t
d(off)
11.2
Fall Time t
f
6.8
Turn−On Delay Time t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0 W
5.0
ns
Rise Time t
r
84
Turn−Off Delay Time t
d(off)
15
Fall Time t
f
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.85 1.1
V
T
J
= 125°C 0.71
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms
,
I
S
= 30 A
24
ns
Charge Time t
a
14
Discharge Time t
b
10.5
Reverse Recovery Charge Q
RR
14 nC
PACKAGE PARASITIC VALUES
Source Inductance L
S
Ta = 25C
2.49
nH
Drain Inductance L
D
0.02
Gate Inductance L
G
3.46
Gate Resistance R
G
3.75
W
6. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P8

NTD50N03R-1G

Mfr. #:
Buy NTD50N03R-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 25V 7.8A IPAK
Lifecycle:
New from this manufacturer.
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