NTD50N03R
http://onsemi.com
4
2.0
1.6
1.2
1.4
1.0
0.8
0.6
1000
100
10,000
40
20
60
0
0.010
010
20
42
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
D
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.045
0.065
543
0.035
0.025
0.015
0.005
6
Figure 3. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
034215
10 30 4020 5
0
0.005
0.015
0.030
0202
15105
V
GS
= 2.6 V
6
40
60
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
I
D
= 10 A
V
GS
= 10 V
0.020
T
J
= 25°C
10
80
8
80
8 V
4 V
2.8 V
3 V
4.5 V
6 V
5.5 V
3.5 V
10 V
0.055
I
D
= 15 A
T
J
= 25°C
987
0.025
V
GS
= 10 V
1.8
150
15379
5 V
7 V
897610
