FSDM0565R
13
output voltage may exceed the rated voltage before the over
load protection is activated, resulting in the breakdown of the
devices in the secondary side. In order to prevent this
situation, an over voltage protection (OVP) circuit is
employed. In general, Vcc is proportional to the output
voltage and the FPS
TM
uses Vcc instead of directly
monitoring the output voltage. If V
CC
exceeds 19V, an OVP
circuit is activated resulting in the termination of the
switching operation. In order to avoid undesired activation of
OVP during normal operation, Vcc should be designed to be
below 19V.
3.4 Thermal Shutdown (TSD) : The Sense FET and the
control IC are built in one package. This makes it easy for
the control IC to detect the heat generation from the Sense
FET. When the temperature exceeds approximately 150°C,
the thermal shutdown is activated.
4. Soft Start : The FPS
TM
has an internal soft start circuit
that increases PWM comparator inverting input voltage
together with the Sense FET current slowly after it starts up.
The typical soft start time is 10msec, The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. It also
helps to prevent transformer saturation and reduce the stress
on the secondary diode during startup.
5. Burst operation : In order to minimize power dissipation
in standby mode, the FPS
TM
enters burst mode operation.
As the load decreases, the feedback voltage decreases. As
shown in figure 9, the device automatically enters burst
mode when the feedback voltage drops below
V
BURL
(500mV). At this point switching stops and the
output voltages start to drop at a rate dependent on standby
current load. This causes the feedback voltage to rise. Once
it passes V
BURH
(700mV) switching resumes. The feedback
voltage then falls and the process repeats. Burst mode
operation alternately enables and disables switching of the
power Sense FET thereby reducing switching loss in
Standby mode.
Figure 9. Waveforms of burst operation
V
FB
Vds
0.5V
0.7V
Ids
Vo
Vo
set
time
Switching
disabled
T1
T2 T3
Switching
disabled
T4
FSDM0565R
14
Typical application circuit
Features
High efficiency (>81% at 85Vac input)
Low zero load power consumption (<300mW at 240Vac input)
Low standby mode power consumption (<800mW at 240Vac input and 0.3W load)
Low component count
Enhanced system reliability through various protection functions
Internal soft-start (10ms)
Key Design Notes
Resistors R102 and R105 are employed to prevent start-up at low input voltage. After startup, there is no power loss in these
resistors since the startup pin is internally disconnected after startup.
The delay time for over load protection is designed to be about 50ms with C106 of 47nF. If a faster triggering of OLP is
required, C106 can be reduced to 10nF.
Zener diode ZD102 is used for a safety test such as UL. When the drain pin and feedback pin are shorted, the zener diode
fails and remains short, which causes the fuse (F1) blown and prevents explosion of the opto-coupler (IC301). This zener
diode also increases the immunity against line surge.
1. Schematic
Application Output power Input voltage Output voltage (Max current)
LCD Monitor 40W
Universal input
(85-265Vac)
5V (2.0A)
12V (2.5A)
3
4
C102
220nF
275VAC
LF101
23mH
C101
220nF
275VAC
RT1
5D-9
F1
FUSE
250V
2A
C103
100uF
400V
R102
30k
R105
40k
R103
56k
2W
C104
2.2nF
1kV
D101
UF 4007
C106
47nF
50V
C105
22uF
50V
D102
TVR10G
R104
5
1
2
3
4
5
T1
EER3016
BD101
2KBP06M3N257
1
2
R101
560k
1W
IC1
FSDM0565R
Vstr
NC
Vfb
Vcc
Drain
GND
1
2
3
4
5
6
ZD101
22V
8
10
D202
MBRF10100
C201
1000uF
25V
C202
1000uF
25V
L201
12V, 2.5A
6
7
D201
MBRF1045
C203
1000uF
10V
C204
1000uF
10V
L202
5V, 2A
R201
1k
R202
1.2k
R204
5.6k
R203
12k
C205
47nF
R205
5.6k
C301
4.7nF
IC301
H11A817A
IC201
KA431
ZD102
10V
FSDM0565R
15
2. Transformer Schematic Diagram
3.Winding Specification
4.Electrical Characteristics
5. Core & Bobbin
Core : EER 3016
Bobbin : EER3016
Ae(mm2) : 96
No Pin (sf) Wire Turns Winding Method
Na 4 50.2
φ
× 1 8 Center Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers
Np/2 2 10.4
φ
× 1 18 Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers
N12v 10 80.3
φ
× 3 7 Center Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers
N5v 7 60.3
φ
× 3 3 Center Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers
Np/2 3 20.4
φ
× 1 18 Solenoid Winding
Outer Insulation: Polyester Tape t = 0.050mm, 2Layers
Pin Specification Remarks
Inductance 1 - 3 520uH ± 10% 100kHz, 1V
Leakage Inductance 1 - 3 10uH Max 2
nd
all short
EER3016
N
p
/2 N
12V
N
a
1
2
3
4
5
6
7
8
9
10
N
p
/2
N
5V

FSDM0565RWDTU

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
AC/DC Converters FPS FOR LCD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet