FSDM0565R
4
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=14mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
Thermal Impedance
Notes:
1. Free standing with no heat-sink under natural convection.
2. Infinite cooling condition - Refer to the SEMI G30-88.
Parameter Symbol Value Unit
Drain-source voltage V
DSS
650 V
Vstr Max Voltage V
STR
650 V
Pulsed Drain current (Tc=25
°C)
(1)
I
DM
11 A
DC
Continuous Drain Current(Tc=25
°C)
I
D
2.8 A
Continuous Drain Current(Tc=100
°C)
1.7 A
Single pulsed avalanche energy
(2)
E
AS
190 mJ
Single pulsed avalanche current
(3)
I
AS
-A
Supply voltage V
CC
20 V
Input voltage range V
FB
-0.3 to V
CC
V
Total power dissipation(Tc=25
°C)
P
D
(Watt H/S) 45 W
Operating junction temperature T
j
Internally limited °C
Operating ambient temperature T
A
-25 to +85 °C
Storage temperature range T
STG
-55 to +150 °C
ESD Capability, HBM Model (All pins
excepts for Vstr and Vfb)
-
2.0
(GND-Vstr/Vfb=1.5kV)
kV
ESD Capability, Machine Model (All pins
excepts for Vstr and Vfb)
-
300
(GND-Vstr/Vfb=225V)
V
Parameter Symbol Value Unit
Junction-to-Ambient Thermal
θ
JA
(1)
49.90 °C/W
Junction-to-Case Thermal
θ
JC
(2)
2.78 °C/W
FSDM0565R
5
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Sense FET SECTION
Drain source breakdown voltage BV
DSS
V
GS
= 0V, I
D
= 250µA 650 - - V
Zero gate voltage drain current I
DSS
V
DS
= 650V, V
GS
= 0V - - 50 µA
V
DS
= 520V
V
GS
= 0V, T
C
= 125°C
- - 200 µA
Static drain source on resistance
(1)
R
DS(ON)
V
GS
= 10V, I
D
= 2.5A - 1.76 2.2
Output capacitance C
OSS
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
-78-pF
Turn on delay time T
D(ON)
V
DD
= 325V, I
D
= 5A
(MOSFET switching
time is essentially
independent of
operating temperature)
-22-
ns
Rise time T
R
-52-
Turn off delay time T
D(OFF)
-95-
Fall time T
F
-50-
CONTROL SECTION
Initial frequency F
OSC
V
FB
= 3V 60 66 72 kHz
Voltage stability F
STABLE
13V Vcc 18V 0 1 3 %
Temperature stability
(2)
F
OSC
-25°C Ta 85°C0±10%
Maximum duty cycle D
MAX
-758085%
Minimum duty cycle D
MIN
---0%
Start threshold voltage V
START
V
FB
=GND 11 12 13 V
Stop threshold voltage V
STOP
V
FB
=GND 789V
Feedback source current I
FB
V
FB
=GND 0.7 0.9 1.1 mA
Soft-start time T
S
Vfb=3 - 10 15 ms
Leading Edge Blanking time T
LEB
- - 250 - ns
BURST MODE SECTION
Burst Mode Voltages
(2)
V
BURH
Vcc=14V - 0.7 - V
V
BURL
Vcc=14V - 0.5 - V
PROTECTION SECTION
Peak current limit
(4)
I
OVER
V
FB
=5V, V
CC
=14V 2.0 2.25 2.5 A
Over voltage protection V
OVP
-181920V
Abnormal Over current protection
current
(3)
I
AOCP
- 4.99 5.54 6.09 A
Thermal shutdown temperature
(2)
T
SD
130 145 160 °C
Shutdown feedback voltage V
SD
V
FB
5.5V 5.5 6.0 6.5 V
FSDM0565R
6
Notes:
1. Pulse test : Pulse width 300µS, duty 2%
2. These parameters, although guaranteed at the design, are not tested in mass production.
3. These parameters, although guaranteed, are tested in EDS(wafer test) process.
4. These parameters indicate the inductor current.
5. This parameter is the current flowing into the control IC.
Shutdown delay current I
DELAY
V
FB
=5V 2.8 3.5 4.2 µA
TOTAL DEVICE SECTION
Operating supply current
(5)
I
OP
V
FB
=GND, V
CC
=14V
-2.55mAI
OP(MIN)
V
FB
=GND, V
CC
=10V
I
OP(MAX)
V
FB
=GND, V
CC
=18V

FSDM0565RWDTU

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
AC/DC Converters FPS FOR LCD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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