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Electrical characteristics STL6NM60N
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
600 V
dv/dt
(1)
1. Characteristics value at turn off on inductive load
Drain-source voltage slope
V
DD
= 480 V, V
GS
= 10 V,
I
D
= 4.6 A
40 V/ns
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
23 4V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 2.3 A
0.85 0.92 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Forward transconductance
V
DS
=15 V, I
D
= 2.3 A
4S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=50V, f=1 MHz, V
GS
=0
420
30
4
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Output equivalent
capacitance
V
GS
=0, V
DS
=0 to 480 V
70 pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level = 20 mV
open drain
6 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
= 4.6 A
V
GS
=10 V
(see Figure 15)
13
2
7
nC
nC
nC
